Demonstration of normally-off p-channel GaN transistor with high threshold voltage and low subthreshold swing based on single p-GaN

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作者：

Yangfeng LI、Zian DONG、Shuai CHEN、Qin WANG、Tong LI、Shulin CHEN、Kun ZHENG、Jie ZHANG、Guojian DING、Yang WANG、Haiqiang JIA、Rong YANG、Lei LIAO

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作者单位：

Changsha Semiconductor Technology and Application Innovation Research Institute,College of Semiconductors(College of Integrated Circuits),Hunan University,Changsha 410082,China

Hunan San'an Semiconductor Co.,Ltd.,Changsha 410000,China

Songshan Lake Materials Laboratory,Dongguan 523808,China

基金：

Hunan Provincial Natural Science Foundation of ChinaNatural Science Foundation of ChangshaNational Natural Science Foundation of ChinaEducation Department of Hunan ProvinceSynergetic Extreme Condition User FacilityFundamental Research Funds for the Central Universities

项目编号：

2024JJ6157kq22082136212208422B00202024-SECUF-PT-001871531118010804

出版年：

2024

DOI：

10.1007/s11432-024-4120-y

中国科学:信息科学(英文版)

中国科学院

中国科学:信息科学(英文版)

CSTPCDEI

影响因子：0.715

ISSN：1674-733X

年,卷(期)：2024.67(9)