中国科学:信息科学(英文版)2024，Vol.67Issue(9) ：344-345.DOI:10.1007/s11432-024-4120-y

Demonstration of normally-off p-channel GaN transistor with high threshold voltage and low subthreshold swing based on single p-GaN

Yangfeng LI Zian DONG Shuai CHEN Qin WANG Tong LI Shulin CHEN Kun ZHENG Jie ZHANG Guojian DING Yang WANG Haiqiang JIA Rong YANG Lei LIAO
中国科学:信息科学(英文版)2024，Vol.67Issue(9) ：344-345.DOI:10.1007/s11432-024-4120-y
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Demonstration of normally-off p-channel GaN transistor with high threshold voltage and low subthreshold swing based on single p-GaN

Yangfeng LI 1Zian DONG 1Shuai CHEN 2Qin WANG 3Tong LI 1Shulin CHEN 1Kun ZHENG 1Jie ZHANG 2Guojian DING 3Yang WANG 3Haiqiang JIA 3Rong YANG 1Lei LIAO1
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作者信息

  • 1. Changsha Semiconductor Technology and Application Innovation Research Institute,College of Semiconductors(College of Integrated Circuits),Hunan University,Changsha 410082,China
  • 2. Hunan San'an Semiconductor Co.,Ltd.,Changsha 410000,China
  • 3. Songshan Lake Materials Laboratory,Dongguan 523808,China
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基金项目

Hunan Provincial Natural Science Foundation of China(2024JJ6157)

Natural Science Foundation of Changsha(kq2208213)

National Natural Science Foundation of China(62122084)

Education Department of Hunan Province(22B0020)

Synergetic Extreme Condition User Facility(2024-SECUF-PT-001871)

Fundamental Research Funds for the Central Universities(531118010804)

出版年

2024
中国科学:信息科学(英文版)
中国科学院

中国科学:信息科学(英文版)

CSTPCDEI
影响因子：0.715
ISSN：1674-733X
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