首页|Artificial afferent neurons based on the metal-insulator transition of VO2

Artificial afferent neurons based on the metal-insulator transition of VO2

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Neuromorphic computing offers significant advantages in addressing data redundancy and en-hancing system energy efficiency.Although extensive research has been conducted on pulsed neural networks and bionic sensors,the development of artificial electronic afferent neurons for low-energy information trans-fer remains limited.This study introduces an artificial afferent neuron comprising a vanadium dioxide(VO2)device,capacitor and resistor.The VO2 devices exhibit stable electrically induced metal-insulator transition(MIT).Leveraging the MIT of this device,we develop an artificial afferent neuron to transform constant or sinusoidal analog signals into pulsed voltage signals.The output frequency increases with the increase of the input voltage,mimicking the faster pulse outputs of biological afferent neurons in response to stronger stimuli.

vanadium dioxidemetal-insulator transitionartificial afferent neuronspulsed voltage signaloutput frequency

Jiayao CHEN、Lei YIN、Yue WANG、Haolin WANG、Dongke LI、Deren YANG、Xiaodong PI

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State Key Laboratory of Silicon and Advanced Semiconductor Materials & School of Materials Science and Engineering,Zhejiang University,Hangzhou 310027,China

Institute of Advanced Semiconductors&Zhejiang Provincial Key Laboratory of Power Semiconductor Materials and Devices,ZJU-Hangzhou Global Scientific and Technological Innovation Centre,Zhejiang University,Hangzhou 311215,China

2024

中国科学:信息科学(英文版)
中国科学院

中国科学:信息科学(英文版)

CSTPCDEI
影响因子:0.715
ISSN:1674-733X
年,卷(期):2024.67(11)