首页|Ultra-low power IGZO optoelectronic synaptic transistors for neuromorphic computing
Ultra-low power IGZO optoelectronic synaptic transistors for neuromorphic computing
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维普
Inspired by biological visual systems,optoelectronic synapses with image perception,memory retention,and preprocessing capabilities offer a promising pathway for developing high-performance artificial perceptual vision computing systems.Among these,oxide-based optoelectronic synaptic transistors are well-known for their enduring photoconductive properties and ease of integration,which hold substantial potential in this regard.In this study,we utilized indium gallium zinc oxide as a semiconductor layer and high-k Zr AlOx as a gate dielectric layer to engineer low-power high-performance synaptic transistors with photonic memory.Crucial biological synaptic functions,including excitatory postsynaptic currents,paired-pulse facilitation,and the transition from short-term to long-term plasticity,were replicated via optical pulse modulation.This simulation was sustained even at an operating voltage as low as 0.0001 V,exhibiting a conspicuous photonic synaptic response with energy consumption as low as 0.0845 fJ per synaptic event.Furthermore,an optoelectronic synaptic device was employed to model"learn-forget-relearn"behavior similar to that exhibited by the human brain,as well as Morse code encoding.Finally,a 3 × 3 device array was constructed to demonstrate its advantages in image recognition and storage.This study provides an effective strategy for developing readily integrable,ultralow-power optoelectronic synapses with substantial potential in the domains of morphological visual systems,biomimetic robotics,and artificial intelligence.
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维普
