首页|Physical origin of planar linear dichroism in van der Waals semiconductors using main group elements

Physical origin of planar linear dichroism in van der Waals semiconductors using main group elements

扫码查看
原文链接
  • 万方数据
  • 维普
Physical origin of planar linear dichroism in van der Waals semiconductors using main group elements
The polarization of light can provide abundant information regarding the polarization degree,phase shift,and Jones vector,which is important in light communication,environmental scanning,quality inspection,etc.Recently,two-dimensional(2D)semiconductors have provided an ideal platform for de-tecting polarized light due to their remarkable and tunable linear dichroism(LD).However,the physical mechanism of the in-plane LD in 2D semiconductors has not been systematically investigated,limiting the further exploration of the 2D anisotropic semiconductors and the directionality of experiments on polariza-tion photodetection.In this study,the in-plane LD of 100 types of 2D semiconductors composed of main group elements is investigated via first-principles theory combined with the decision tree algorithm and ex-perimental measurement.The in-plane asymmetry of the lattice and band edge wavefunctions are the main origins of the in-plane LD.2D semiconductors with in-plane orthorhombic and monoclinic lattices tend to have considerable in-plane LD,while their hexagonal counterparts are optically isotropic.Specifically,or-thorhombic 2D semiconductors possess larger in-plane LD because their intrinsic mirror planes in the lattice induce in-plane parity of the wavefunctions at the band edges.The decision tree algorithm further reveals that in-plane LD is also related to the difference for the a and b lattice constants and the electronegativity difference between the cation and anion.In addition,heterostructures formed from these 2D semiconductors exhibit high light absorption,strong in-plane LD,and various types of band alignment.The result of our study can promote the application and development of 2D semiconductors in polarization optoelectronics.

2D semiconductorlinear dichroismoptical propertiesin-plane symmetrymain group elements

Qiang GAO、Yali YU、Kaiyao XIN、Ziqi ZHOU、Hui-Xiong DENG、Lin LI、Xiaojie TANG、Congxin XIA、Duan-Yang LIU、Jian-Bai XIA、Jun KANG、Zhongming WEI

展开 >

State Key Laboratory of Superlattices and Micro structures,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China

Beijing Computational Science Research Center,Beijing 100193,China

Center of Materials Science and Optoelectronics Engineering,University of Chinese Academy of Sciences,Beijing 100049,China

School of Physics,Henan Key Laboratory of Photovoltaic Materials,Henan Normal University,Xinxiang 453007,China

School of Physics and Optoelectronic Engineering,Zhengzhou Key Laboratory of Low-Dimensional Quantum Materials and Devices,Zhongyuan University of Technology,Zhengzhou 450007,China

展开 >

2D semiconductor linear dichroism optical properties in-plane symmetry main group elements

2024

10.1007/s11432-024-4191-5

中国科学:信息科学(英文版)
中国科学院

中国科学:信息科学(英文版)

CSTPCDEI
影响因子：0.715
ISSN：1674-733X
年,卷(期)：2024.67(12)