High-voltage quasi-vertical GaN-on-Si Schottky barrier diode with edge termination structure of optimized multi-level N ion implantation

Qingyuan CHANG Bin HOU Ling YANG Mei WU Meng ZHANG Hao LU Fuchun JIA Xuerui NIU Chunzhou SHI Jiale DU Mao JIA Qian YU Shiming LI Youjun ZHU Xiaohua MA Yue HAO

中国科学:信息科学(英文版)2024，Vol.67Issue(12) ：335-336.DOI:10.1007/s11432-024-4164-1

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High-voltage quasi-vertical GaN-on-Si Schottky barrier diode with edge termination structure of optimized multi-level N ion implantation

Qingyuan CHANG ¹Bin HOU ¹Ling YANG ¹Mei WU ¹Meng ZHANG ¹Hao LU ¹Fuchun JIA ²Xuerui NIU ¹Chunzhou SHI ³Jiale DU ¹Mao JIA ¹Qian YU ¹Shiming LI ¹Youjun ZHU ¹Xiaohua MA ¹Yue HAO¹

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作者信息

1. School of Microelectronics,Xidian University,Xi'an 710071,China
2. The 29th Research Institute of China Electronics Technology Group Corporation,Chengdu 610036,China
3. School of Advanced Materials and Nanotechnology,Xidian University,Xi'an 710071,China
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出版年

2024

中国科学:信息科学(英文版)

中国科学院

中国科学:信息科学(英文版)

CSTPCDEI

影响因子：0.715

ISSN：1674-733X

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