首页|Electronic structures and Mott state of epitaxial TaS2 monolayers

Electronic structures and Mott state of epitaxial TaS2 monolayers

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Layered material TaS2 hosts multiple structural phases and exotic correlated quantum states,including charge density wave(CDW),superconductivity,quantum spin liquid,and Mott insulating state.Here,we synthesized TaS2 monolayers in H and T phases using the molecular beam epitaxial(MBE)method and studied their electronic structures via angle-resolved photo-emission spectroscopy(ARPES).We found that the H phase TaS2(H-TaS2)monolayer is metallic,with an energy band crossing the Fermi level.In contrast,the T phase TaS2(T-TaS2)monolayer shows an insulated energy gap at the Fermi level,while the normal calculated band structure implies it should be metallic without any band gap.However,by considering Hubbard interaction potential U,further density functional theory(DFT)calculation suggests that monolayer T-TaS2 could be a CDW Mott insulator,and the DFT+U calculation matches well with the ARPES result.More significantly,the temperature-dependent ARPES result indicates that the CDW Mott state in the T-TaS2 monolayer is more robust than its bulk counterpart and can persist at room temperature.Our results reveal that the dimensional effect can enhance the CDW Mott state and provide valuable insights for further exploring the exotic properties of monolayer TaS2.

TaS2Mott insulating statecharge density waveangle-resolved photoemission spectroscopy

Qichao Tian、Chi Ding、Xiaodong Qiu、Qinghao Meng、Kaili Wang、Fan Yu、Yuyang Mu、Can Wang、Jian Sun、Yi Zhang

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National Laboratory of Solid State Microstructure,School of Physics,Nanjing University,Nanjing 210093,China

School of Physics and Electronic Sciences,Changsha University of Science and Technology,Changsha 410114,China

Collaborative Innovation Center of Advanced Microstructures,Nanjing University,Nanjing 210093,China

Hefei National Laboratory,Hefei 230088,China

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National Natural Science Foundation of ChinaInnovation Program for Quantum Science and Technology of ChinaNational Key Research and Development Program of ChinaProgram of High-Level Entrepreneurial and Innovative Talents Introduction of Jiangsu Province,China

921652052021ZD03028032018YF40306800

2024

10.1007/s11433-023-2328-1

中国科学:物理学 力学 天文学(英文版)
中国科学院

中国科学:物理学 力学 天文学(英文版)

CSTPCD
影响因子：0.91
ISSN：1674-7348
年,卷(期)：2024.67(5)