首页|Crystalline-amorphization-recrystallization structural transition and emergent superconductivity in van der Waals semiconductor SiP under compression

Crystalline-amorphization-recrystallization structural transition and emergent superconductivity in van der Waals semiconductor SiP under compression

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van der Waals(vdW)semiconductors have gained significant attention due to their unique physical properties and promising applications,which are embedded within distinct crystallographic symmetries.Here,we report a pressure-induced crystalline-amorphization-recrystallization transition under compression in binary vdW semiconductor SiP.Upon compression to 52 GPa,bulk SiP undergoes a consecutive phase transition from pristine crystalline to amorphous phase,ultimately to recrystallized phase.By employing synchrotron X-ray diffraction experiments in conjunction with high-pressure crystal structure searching techniques,we reveal that the recrystallized SiP hosts a tetragonal structure(space group 14mm)and further transforms partially into a cubic phase(space group Fm(3)m).Consistently,electrical transport and alternating-current magnetic susceptibility mea-surements indicate the presence of three superconducting phases,which are embedded in separate crystallographic symmetries-the amorphous,tetragonal,and cubic structures.Furthermore,a high superconducting transition temperature of 12.3 K is observed in its recovered tetragonal phase during decompression.Our findings uncover a novel phase evolution path and elucidate a pressure-engineered structure-property relationship in vdW semiconductor SiP.These results not only offer a new platform to explore the transformation between different structures and functionalities,but also provide new opportunities for the design and exploration of advanced devices based on vdW materials.

recrystallizationsuperconductivityamorphizationhigh pressurevan der Waals semiconductor

Chunhua Chen、Zhenyu Ding、Yonghui Zhou、Yifang Yuan、Nixian Qian、Jing Wang、Suhnuhua Wang、Ying Zhou、Chao An、Min Zhang、Xuliang Chen、Xiaoping Yang、Mingliang Tian、Zhaorong Yang

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Anhui Key Laboratory of Low-Energy Quantum Materials and Devices,High Magnetic Field Laboratory HFIPS,Chinese Academy of Sciences,Hefei 230031,China

Science Island Branch of Graduate School,University of Science and Technology of China,Hefei 230026,China

Key Laboratory of Material Physics,Ministry of Education,School of Physics and Microelectronics,Zhengzhou University,Zhengzhou 450001,China

Institutes of Physical Science and Information Technology,Anhui University,Hefei 230601,China

Collaborative Innovation Center of Advanced Microstructures,Nanjing University,Nanjing 210093,China

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National Key Research and Development Program of ChinaNational Key Research and Development Program of ChinaNational Natural Science Foundation of ChinaNational Natural Science Foundation of ChinaNational Natural Science Foundation of ChinaNational Natural Science Foundation of ChinaNational Natural Science Foundation of ChinaNational Natural Science Foundation of ChinaNational Natural Science Foundation of ChinaNatural Science Foundation of Anhui ProvinceNatural Science Foundation of Anhui ProvinceBasic Research Program of the Chinese Academy of Sciences Based on Major Scientific InfrastructuresYouth Innovation Promotion Association CASHigh Magnetic Field Laboratory of Anhui Province

2023YFA14061022022YFA16026031237404912174397122044201220400412174395U19A2093120040042308085MA162308085QA18JZHKYPT-2021-082020443AHHM-FX-2021-03

2024

10.1007/s11433-023-2325-x

中国科学:物理学 力学 天文学(英文版)
中国科学院

中国科学:物理学 力学 天文学(英文版)

CSTPCD
影响因子：0.91
ISSN：1674-7348
年,卷(期)：2024.67(5)