中国科学:物理学 力学 天文学(英文版)2024，Vol.67Issue(8) ：118-125.DOI:10.1007/s11433-024-2383-6

Fermi level tuning in Sn1-xPbxTe/Pb heterostructure via changing interface roughness

Tengteng Liu Zhaoxia Yi Bangjin Xie Weiyan Zheng Dandan Guan Shiyong Wang Hao Zheng Canhua Liu Hao Yang Yaoyi Li Jinfeng Jia
中国科学:物理学 力学 天文学(英文版)2024，Vol.67Issue(8) ：118-125.DOI:10.1007/s11433-024-2383-6
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Fermi level tuning in Sn1-xPbxTe/Pb heterostructure via changing interface roughness

Tengteng Liu 1Zhaoxia Yi 1Bangjin Xie 1Weiyan Zheng 1Dandan Guan 2Shiyong Wang 2Hao Zheng 2Canhua Liu 2Hao Yang 2Yaoyi Li 2Jinfeng Jia2
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作者信息

  • 1. Key Laboratory of Artificial Structures and Quantum Control(Ministry of Education),Tsung-Dao Lee Institute,School of Physics and Astronomy,Shanghai Jiao Tong University,Shanghai 200240,China
  • 2. Key Laboratory of Artificial Structures and Quantum Control(Ministry of Education),Tsung-Dao Lee Institute,School of Physics and Astronomy,Shanghai Jiao Tong University,Shanghai 200240,China;Shanghai Research Center for Quantum Sciences,Shanghai 201315,China;Hefei National Laboratory,Hefei 230088,China
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Abstract

Superconducting SnTe-type topological crystalline insulators(TCIs)are predicted to host multiple Majorana zero modes(MZMs)which can coexist in a single vortex.Fermi level(FL)close to the Dirac points of topological surface states is helpful for detecting MZMs.However,the TCI SnTe is a heavily p-type semiconductor which is very difficult to modify to n-type via doping or alloying.In this work,we fabricate the atomically flat Sn1-xPbxTe/Pb heterostructure by molecular beam epitaxy,and make the p-type Sn1-xPbxTe become n-type through changing the interface roughness.Using scanning tunnelling microscope,we find the Dirac points of Sn1-xPbxTe/Pb heterostructure are always above the FL due to the Fermi level pinning(FLP)induced by topological surface states at atomically flat interface.After increasing the interface roughness,the FLP effect is suppressed and then the Dirac points of p-type Sn1.xPbxTe can be tuned very close to or even below the FL.Our work provides a new method for tuning the FL of SnTe-type TCI which has potential application in novel topological superconductor device.

Key words

topological crystalline insulator/superconductor/heterostructure/Fermi level pinning/interface roughness

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基金项目

Ministry of Science and Technology of China(2019YFA0308600)

Ministry of Science and Technology of China(2020YFA0309000)

National Natural Science Foundation of China(11861161003)

National Natural Science Foundation of China(12104293)

National Natural Science Foundation of China(92365302)

National Natural Science Foundation of China(22325203)

National Natural Science Foundation of China(92265105)

National Natural Science Foundation of China(92065201)

National Natural Science Foundation of China(12074247)

National Natural Science Foundation of China(12174252)

Strategic Priority Research Program of Chinese Academy of Sciences(XDB28000000)

Science and Technology Commission of Shanghai Municipality(2019SHZDZX01)

Science and Technology Commission of Shanghai Municipality(19JC1412701)

Science and Technology Commission of Shanghai Municipality(20QA1405100)

Innovation program for Quantum Science and Technology(2021ZD0302500)

China National Postdoctoral Program for Innovative Talents(BX2021185)

出版年

2024
中国科学:物理学 力学 天文学(英文版)
中国科学院

中国科学:物理学 力学 天文学(英文版)

CSTPCD
影响因子：0.91
ISSN：1674-7348
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