中国科学:物理学 力学 天文学(英文版)2024，Vol.67Issue(8) ：177-186.DOI:10.1007/s11433-024-2376-9

Pressure-triggered stacking dependence of interlayer coupling in bilayer WS2

Zejuan Zhang Chenyin Jiao Shenghai Pei Xilong Zhou Jiaze Qin Wanli Zhang Yu Zhou Zenghui Wang Juan Xia
中国科学:物理学 力学 天文学(英文版)2024，Vol.67Issue(8) ：177-186.DOI:10.1007/s11433-024-2376-9
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Pressure-triggered stacking dependence of interlayer coupling in bilayer WS2

Zejuan Zhang 1Chenyin Jiao 2Shenghai Pei 2Xilong Zhou 3Jiaze Qin 2Wanli Zhang 4Yu Zhou 3Zenghui Wang 5Juan Xia2
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作者信息

  • 1. School of Integrated Sciences and Engineering(Exemplary School of Microelectronics),University of Electronic Science and Technology of China,Chengdu 610054,China
  • 2. Institute of Fundamental and Frontier Sciences,University of Electronic Science and Technology of China,Chengdu 610054,China
  • 3. School of Physics and Electronics,Hunan Key Laboratory of Nanophotonics and Devices,Central South University,Changsha 410083,China
  • 4. School of Integrated Sciences and Engineering(Exemplary School of Microelectronics),University of Electronic Science and Technology of China,Chengdu 610054,China;State Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Science and Technology of China,Chengdu 611731,China
  • 5. Institute of Fundamental and Frontier Sciences,University of Electronic Science and Technology of China,Chengdu 610054,China;State Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Science and Technology of China,Chengdu 611731,China
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Abstract

Tungsten disulfide(WS2)has been reported to show negligible stacking dependence under ambient conditions,impeding its further explorations on physical properties and potential applications.Here,we realize efficient modulation of interlayer coupling in bilayer WS2 with 3R and 2H stackings by high pressure,and find that the pressure-triggered interlayer coupling and pressure-induced resonant-to-nonresonant transition exhibit prominent stacking dependence,which are experimentally observed for the first time in WS2.Our work may unleash the stacking degree of freedom in designing WS2 devices with tailored properties correlated to interlayer coupling.

Key words

tungsten disulfide/pressure engineering/stacking order/interlayer coupling

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基金项目

National Natural Science Foundation of China(T2325007)

National Natural Science Foundation of China(62250073)

National Natural Science Foundation of China(U21A20459)

National Natural Science Foundation of China(62004026)

National Natural Science Foundation of China(61774029)

National Natural Science Foundation of China(62104029)

National Natural Science Foundation of China(12104086)

National Natural Science Foundation of China(62150052)

National Natural Science Foundation of China(U23A20570)

National Natural Science Foundation of China(51902346)

Sichuan Science and Technology Program(2021JDTD0028)

Sichuan Science and Technology Program(2023NSFSC1334)

Sichuan Science and Technology Program(24NSFSC5852)

Sichuan Science and Technology Program(24NSFSC5853)

Science and Technology Innovation Program of Hunan Province(2021RC3021)

出版年

2024
中国科学:物理学 力学 天文学(英文版)
中国科学院

中国科学:物理学 力学 天文学(英文版)

CSTPCD
影响因子：0.91
ISSN：1674-7348
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