首页|Al1-xScxSbyN1-y:An opportunity for ferroelectric semiconductor field effect transistor
Al1-xScxSbyN1-y:An opportunity for ferroelectric semiconductor field effect transistor
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Al1-xScxSbyN1-y:An opportunity for ferroelectric semiconductor field effect transistor
For the in-memory computation architecture,a ferroelectric semiconductor field-effect transistor(FeSFET)incorporates ferro-electric material into the FET channel to realize logic and memory in a single device.The emerging group Ⅲ nitride material Al1-xScxN provides an excellent platform to explore FeSFET,as this material has significant electric polarization,ferroelectric switching,and high carrier mobility.However,steps need to be taken to reduce the large band gap of～5 eV of Al1-xScxN to improve its transport property for in-memory logic applications.By state-of-the-art first principles analysis,here we predict that alloying a relatively small amount(less than～5％)of Sb impurities into Al1-xScxN very effectively reduces the band gap while maintaining excellent ferroelectricity.We show that the co-doped Sb and Sc act cooperatively to give a significant band bowing leading to a small band gap of～1.76 eV and a large polarization parameter～0.87 C/m2,in the quaternary Al1-xScxSbyN1-y com-pounds.The Sb impurity states become more continuous as a result of interactions with Sc and can be used for impurity-mediated transport.Based on the Landau-Khalatnikov model,the Landau parameters and the corresponding ferroelectric hysteresis loops are obtained for the quaternary compounds.These findings indicate that Al1-xScxSbyN1-y is an excellent candidate as the channel material of FeSFET.
ferroelectricityAl1-xScxNFeSFET
Shujin Guo、Xianghua Kong、Hong Guo
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College of Physics and Electronic Engineering,Center for Computational Sciences,Sichuan Normal University,Chengdu 610068,China
College of Physics and Optoelectronic Engineering,Shenzhen University,Shenzhen 518060,China
Department of Physics,McGill University,Montreal H3A 2T8,Canada
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