基于磁控溅射系统的大尺寸Ga2O3薄膜沉积模型与性能研究
Research on the deposition model and properties of large-size Ga2O3 thin films based on magnetron sputtering system
肖厚恩 1王顺利2
作者信息
- 1. 浙江理工大学材料科学与工程学院,杭州 310018
- 2. 浙江理工大学理学院,杭州 310018;浙江理工大学常山研究院有限公司,浙江衢州 324200
- 折叠
摘要
薄膜型Ga2O3光电探测器具有成本低廉、性能优异、可重复性高等优点,实现Ga2O3薄膜大尺寸均匀生长对批量制备薄膜型Ga2O3光电探测器具有重要意义.为了实现大尺寸Ga2O3薄膜的高效生长,采用Matlab软件对磁控溅射系统中倾斜圆形平面靶与旋转水平工作台上Ga2O3薄膜沉积模型进行了仿真,分析了靶基距和溅射靶转动角度对薄膜性能的影响,并进行了实验验证.结果表明:靶基距的增加会提高沉积薄膜的均匀性,在一定的靶基距下溅射靶转动角度的增加会使薄膜均匀性先提高后降低,Ga2O3薄膜均匀性实验分析结果与仿真结果基本一致;在靶基距为100 mm、溅射靶转动角度为35°的条件下,在蓝宝石衬底上沉积得到了平均厚度偏差为1.27％的Ga2O3薄膜;以沉积的薄膜批量制备Ga2O3光电探测器,得到的光电探测器对254 nm的光源具有基本一致的光响应.该研究为大批量制备高质量Ga2O3薄膜探测器提供了一定的理论依据.
Abstract
Thin-film type Ga2O3 photodetectors possess advantages such as low cost,excellent performance,and high repeatability,making large-size and uniform growth of Ga2O3 thin films of great significance for the mass production of such photodetectors.To achieve the efficient growth of large-size Ga2O3 films,a simulation of Ga2O3 film deposition model was conducted by using Matlab software in the magnetron sputtering system,considering the inclined circular plane target and rotating horizontal workbench.The effects of target-to-substrate distance and sputtering target rotation angle on film properties were analyzed,followed by experimental validation.The simulation results show that an increase in target-substrate distance enhances the uniformity of the deposited film and that an increase in spray target rotation angle enhances the uniformity of the film at first and then decreases it under a certain target-substrate distance.Additionally,the experimental results of Ga2O3 film uniformity analysis are generally consistent with the simulation results.Under the conditions of a target-to-substrate distance of 100 mm and a sputtering target rotation angle of 35°,a Ga2O3 film with an average thickness deviation of 1.27％is obtained on a sapphire substrate.The Ga2O3 photodetectors are then mass-produced from the deposited films,which shows a basic consistent response to a 254 nm light source.This study provides a certain theoretical basis for the mass production of high-quality Ga2O3 thin film detectors.
关键词
Ga2O3/磁控溅射/大尺寸/倾斜圆型平面靶/MatlabKey words
Ga2O3/magnetron sputtering/large-scale/tilted circular planar targets/Matlab引用本文复制引用
基金项目
国家自然科学基金(62274148)
浙江省自然科学基金(LY20F040005)
浙江理工大学科研启动基金(20062224-Y)
出版年
2024
NETL
NSTL
万方数据