首页|石墨/4H碳化硅纳米多孔阵列光阳极的制备及其光电催化性能研究

石墨/4H碳化硅纳米多孔阵列光阳极的制备及其光电催化性能研究

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为提高4H碳化硅(4H Silicon carbide,4H-SiC)纳米材料的光电催化性能,采用两步阳极氧化法制备了4H-SiC纳米多孔阵列(Nanoporous array,NA),并通过高温退火制备石墨/4H-SiC NA光阳极;通过扫描电子显微镜、透射电子显微镜、X射线光电子能谱仪、高分辨多功能光谱仪和电化学工作站对石墨/4H-SiC NA光阳极的形貌、结构和性能进行了表征.结果表明:阳极氧化法能够刻蚀出纳米多孔,有效提高了 4H-SiC的比表面积,同时增强了电解液与材料的接触面积;经过退火处理后,4H-SiC NA光阳极表面含有分散的石墨;在光照和暗场条件下石墨的存在增强了光生载流子的分离效果,经过优化的4H-SiC NA光阳极在光功率100 mW/cm2的模拟太阳光照条件下,相对于可逆氢电极(Reversible hydrogen electrode,RHE),其光电流密度在1.23 V达到4.72 mA/cm2,相比4H-SiCNA光阳极提升了 4.14 mA/cm2.该研究为提升基于4H-SiC材料的光电催化制氢性能提供了一种新思路.
Preparation and photoelectrochemical performance of graphite/4H silicon carbide nanoporous array photoanodes
To enhance the photoelectrochemical performance of 4H silicon carbide(4H-SiC)nanomaterials,a two-step anodic oxidation method was employed to prepare a 4H-SiC nanoporous array(NA).Subsequently,high-temperature annealing was applied for the fabrication of graphite/4H-SiC NA photoanodes.Then,the morphology,structure,and performance of graphite/4H-SiC NA photoanodes were characterized through scanning electron microscopy,transmission electron microscopy,X-ray photoelectron spectrometer,high-resolution multifunctional spectroscopy and an electrochemical workstation.The results indicate that anodic oxidation can etch out nano-pores,effectively increasing the specific surface area of 4H-SiC,while enhancing the contact area between the electrolyte and the material;after annealing,the surface of 4H-SiC NA photoanodes contains dispersed graphite.Under both light and dark conditions,the presence of graphite enhances the separation of photogenerated charge carriers,and the optimized 4H-SiC NA photoanodes achieve a photocurrent density of 4.72 mA/cm2 at 1.23 V versus the reversible hydrogen electrode(RHE)under simulated solar illumination with a light power of 100 mW/cm2,representing an enhancement of 4.14 mA/cm2 compared to 4H-SiC NA photoanodes.This paper provides a new approach for improving the photoelectrochemical(PEC)hydrogen production performance based on 4H-SiC materials.

4H-SiCnanoporous arrayphotocathodegraphitephotoelectrochemical

裴岩、王蓉、崔灿、徐凌波

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浙江理工大学理学院,杭州 310018

浙江大学杭州国际科创中心先进半导体研究院,杭州 311200

浙江大学杭州国际科创中心浙江省宽禁带功率半导体材料与器件重点实验室,杭州 311200

4H-SiC 纳米多孔阵列 光阳极 石墨 光电催化

2024

浙江理工大学学报
浙江理工大学

浙江理工大学学报

影响因子:0.311
ISSN:1673-3851
年,卷(期):2024.51(11)