Design of a 210 kV All-solid-state High Voltage Pulse Modulator
To overcome the serious waveform distortion and poor reliability caused by high primary voltage in traditional high voltage pulse modulators,an all-solid-state high voltage pulse modulator with semiconductor device pulse switch is introduced.The design principle,structural characteristics,and driv-ing control method of the modulator are elaborated in detail.The modulator is composed of 18-stage mod-ules in parallel,and the energy storage capacitors,high-voltage charging,and solid-state switch drive power supply in each stage are all isolated by high-voltage silicon stacks.For each module,an independ-ently controlled high voltage insulated gate bipolar transistor(IGBT)is used to charge and discharge the energy storage capacitor.The IGBT driver circuit adopts high voltage silicon stack isolation power supply,fiber optic transmission trigger pulse,and high performance IGBT driver module.It has complete under-voltage,overcurrent,and overvoltage protection functions.The modulator outputs a square high voltage pulse with an amplitude greater than 210 kV and a pulse top width of 5 μs.The pulse leading edge is about 690ns,the pulse trailing edge is about 920ns,and the repetition frequency is 100 Hz.
High power microwaveSolid-state modulationIGBTSynchronous trigger
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