Technological Analysis of Silicon Carbide Based Vacuum Nanoscale Electronic Devices
Emerging vacuum nanoscale electronic devices combine the advantages of solid-state device integrated circuits and traditional vacuum electronic devices.However,the same process and integration platform with silicon devices limits their wider application in harsh environment.The use of wide bandgap semiconductor material silicon carbide in the preparation of vacuum nanoscale electronic devices can provide both radiation resistance and high temperature resistance,giving the device excellent comprehensive advan-tages.The problems faced in the development of silicon devices and integrated circuits are analyzed,the development history of vacuum nanoscale electronic devices is reviewed,the relative advantages of silicon carbide materials and the current research status of silicon carbide based vacuum nanoscale electronic de-vices are introduced,and the development and application prospects of the devices are analyzed.
国家科技期刊平台
NSTL
万方数据
