首页|国产氮化硅AMB覆铜板可靠性研究

国产氮化硅AMB覆铜板可靠性研究

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氮化硅陶瓷覆铜板具有优异的高可靠性,使其成为新能源汽车、高铁等领域功率模块的必选散热基板材料之一.采用活性金属化焊接工艺制备国产氮化硅 AMB覆铜板,剥离强度≥14 N/mm,且整版剥离强度性能均匀;在 350~25℃高低温冲击 120 次,并未出现显著分层,剥离强度并未出现显著降低;国产氮化硅 AMB覆铜板端子拉拔测试断裂处呈现 S弯,铜层并未出现拉起现象.国产氮化硅 AMB覆铜板与进口产品相当,可满足功率模块使用要求.
Reliability Study of the Domestic Silicon Nitride Active Metal Brazing Copper Ceramic Substrate
The excellent reliability of silicon nitride-copper ceramic substrate makes it one of the essen-tial heat dissipation substrate materials for power modules in fields such as new energy vehicles and high-speed railways.The active metal brazing process is used to manufacture domestic silicon nitride-copper ce-ramic substrate.The peel strength of the substrate is≥14 N/mm,and the overall peel strength perform-ance is uniform.After being subjected to high and low temperature shocks at 300℃-25℃for 120 cycles,no significant delamination is observed,and the peel strength does not show a significant decrease.The domestic silicon nitride active metal brazing copper ceramic substrate shows an S-shaped bend at the frac-ture point during the pull-out test,and the copper layer doesn't show any copper layer delamination.The domestic silicon nitride active metal brazing copper ceramic substrate is comparable to imported products and can meet the requirements of power module usage.

Silicon nitrideActive metal brazingPeel strengthThermal cycle

周泽安、张振文、耿春磊、许海仙、朱家旭、黄胜猛、张浩

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合肥圣达电子科技实业有限公司,安徽 合肥 230088

中国电子科技集团公司第 43 研究所,安徽 合肥 230088

氮化硅陶瓷 活性金属化焊接 剥离强度 温度循环

2024

真空电子技术
北京真空电子技术研究所

真空电子技术

影响因子:0.166
ISSN:1002-8935
年,卷(期):2024.(4)