Research on Defect Density Control of Transverse Epitaxial Single Crystal Diamond Based on Laser Processing
Single crystal diamond has numerous excellent properties and is known as the ultimate semicon-ductor.With the advent of 5 G and big data,high-quality single crystal diamond has become a hot semiconductor material.However,single crystal diamonds in current market have the problems of high defect density and poor crystal quality,which seriously restrict the development of single crystal diamond in semiconductor field.In re-sponse to above issues,a pre structured diamond substrate with grid like patterning is first prepared through laser processing,then a growth layer with a defect density reduced by 25 times can be obtained through epitaxial-later-al-overgrowth(ELO).The research has significant guiding significance for breaking through the crystal quality limitations of diamond in cutting-edge fields.
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维普
