Research Progress and Challenges of Diamond Semiconductor and Power Schottky Barrier Diodes
As an ultra-wide bandgap semiconductor,diamond is one of the most promising materials for next generation of power electronic devices and optoelectronic devices.However,the industrialization of diamond still needs to solve several key technical problems:large-sized single crystal epitaxial growth,high-quality wafer prepa-ration technology,efficient and controllable doping technology,and advanced terminal structures.The research progress on mosaic growth and heteroepitaxy to obtain large-sized single crystal substrates is introduced.The re-search progress on dislocation and defect control techniques and cutting techniques for large-sized single crystal dia-mond is summarized.The challenges faced by diamond doping and terminal structure design are summarized from the perspective of power device design and fabrication,and the corresponding potential solutions are proposed.
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维普
