Research Status of Enhanced Diamond Field Effect Transistors Based on Surface Termination
The semiconductive material diamond has excellent properties such as large bandgap width,high breakdown field,high carrier mobility,ultra-high thermal conductivity,radiation resistance,and corrosion resist-ance.Field effect transistors(FETs)based on diamond have extremely broad application prospects in the fields of ultra-high frequency,ultra-high power,high temperature,and special environments.Thanks to the conductive properties of hydrogen terminal diamond surfaces,diamond FETs had made significant progress in the past 30 years.The conductive mechanism of hydrogen terminal diamond is outlined,and the development history of hydro-gen terminated diamond FETs are reviewed.The research status of enhanced mode(normally-off)devices is dis-cussed in detail,and several technical paths to achieve enhanced characteristics are summarized.Finally,the urgent problems of the surface terminated enhanced diamond FETs are summarized and the development prospects are en-visaged.
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维普
