Based on the boron doped diamond epitaxial material,an ampere-scale high current diamond power Schottky barrier diode(SBD)is developed.In order to achieve high on-current and high breakdown volt-age,the device is designed with a vertical structure consisting of a 300 µm heavily boron doped diamond sub-strate and a 2.5 μm lightly doping drift layer.A good Schottky contact is formed by using low work function metal Ti with p-type diamond.The Schottky barrier height is 1.23 eV and the ideal factor is 1.54.Boron ion im-plantation is carried out at the edge of the Schottky electrode to suppress the edge electric field.The diamond power SBD demonstrates a forward on-current of 1 A,a reverse breakdown voltage of 653V,and a Baliga's Fig-ure of Merit(BFOM)of 20.1 MW/cm2.
DiamondBoron dopingSchottky barrier diodeOn currentBreakdown voltage
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维普
