Study on the Characteristics of Boron-doped Pseudo Vertical Diamond Schottky Barrier Diodes
Diamond is a typical representative of ultra-wide bandgap semiconductor materials.It has signifi-cant advantages in high-temperature,high-frequency,high-power microwave,and power electronic device appli-cations due to its excellent material properties.P-type doped diamond diode have attracted widespread attention due to its simple process and potential to exhibit high diamond breakdown field strength.In this study,micro-wave plasma chemical vapor deposition equipment is used to control the boron-doped concentration during the ep-itaxy process of single-crystal diamond,and diamond epitaxial layers with p-/p+structure are prepared on dia-mond intrinsic substrates,with doping concentrations of 1018 cm-3 and 1020 cm-3,respectively.Subsequently,a diamond Schottky diode device with a pseudo vertical structure is fabricated using the structure.The test results show that the forward on-resistance of the device is 90 mΩ·cm2,the turn-on voltage is about-1.68 V,the re-verse breakdown field strength is 2.4 MV/cm,and the normalized current density is 53.05 A/cm2.The carrier concentration of the drift layer in the device is calculated to be 1.16 × 1018 cm-3.The on-resistance and break-down field strength of the device reaches international advanced level.In subsequent studies,it is expected that the breakdown performance of the device can be improved by further increasing the thickness of the light doped layer.
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维普
