Simulation Study on the Effect of Drain Structure on the Performance of Planar Nanochannel Vacuum Transistors
In recent years,vacuum electronic devices based on nanochannels have attracted increasing atten-tion.Among them,planar nanochannel vacuum transistors have shown better development potential due to the use of planar processes,relatively simple manufacturing processes,and compatibility with microelectronic manu-facturing processes.Based on the fact that the sharper the source electrode of the device,the stronger the local electric field,and the easier it is to achieve electron emission,related research mainly focuses on the influence of source electrode shape and structural size on device performance,and there are few reports on the influence of drain electrode shape.Vacuum transistor structures with circular drain electrode shape are proposed,and the effects of drain electrode radius and vacuum channel length on device performance are simulated.The results show that for devices with a vacuum channel of 40 nm and a drain curvature radius of 60 nm,under a source drain voltage of 10 V and a gate voltage of 1 V,the source drain current reaches 10-4 A.Compared to flat drain vacuum transistors,the circular drain vacuum transistor can obtain larger source drain current due to its larger e-lectron receiving area,which is beneficial for improving device performance.
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