Effects of Exogenous Silicon on Seed Germination and Physiological Characteristics of Brassica pekinensis under Salt Stress
In order to explore the effects of different concentrations of exogenous silicon on seed germination and seedling physiological characteristics of Brassica pekinensis under salt stress,the variety"Huanai B1 102 Chunyuhuang"was used as the test material,a single-factor completely randomized block design was conducted.Under 85.55 mmol/L NaCl salt stress,six treatments were set up:CK1(distilled water),CK2(NaCl),Al(NaCl+0.5 mmol/L Si),A2(NaCl+1.0 mmol/L Si),A3(NaCl+2.0 mmol/L Si),and A4(NaCl+4.0 mmol/L Si),each treatment was repeated three times.The changes of seed germination,seedling growth index and physiological activity were determined.The results showed that different concentrations of exogenous silicon could effectively alleviate the damage caused by salt stress to the seeds and seedlings of Brassica pekinensis.When the concentration of silicon was 1.0 mmol/L,the germination rate,germination potential,germination index and vigor index of Brassica pekinensis seeds were significantly increased.At the same time,the plant height,stem diameter,leaf area,root volume and chlorophyll content of Brassica pekinensis seedlings also increased significantly,the activity of peroxidase in leaves increased,and the content of malondialdehyde decreased.Exogenous silicon could effectively regulate the inhibition of salt stress on seed germination and seedling growth of"Huanai B1 102 Chunyuhuang",and the best concentration of silicon to alleviate salt stress was 1.0 mmol/L.
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