碳化硅陶瓷热导率影响因素研究
Research on influencing factors of the SiC ceramic thermal conductivity
马逸飞 1李其松 1黄权 1贾少培 1成晓哲 1牛乾元 1张艳丽 1穆云超1
作者信息
- 1. 中原工学院材料与化工学院 ,河南郑州 450007
- 折叠
摘要
碳化硅陶瓷是一种应用广泛的高热导率材料.结合国内外研究,讨论了碳化硅陶瓷的导热机理和影响因素,认为杂质、气孔和晶界是影响碳化硅陶瓷热导率的主要因素,减少杂质、气孔和晶界有利于提高热导率.给出了制备高热导率碳化硅陶瓷的建议:提高碳化硅陶瓷致密度以减少气孔;增大碳化硅晶粒尺寸以减少晶界;在不降低致密度的前提下,降低烧结助剂含量、减少烧结助剂种类,且添加的烧结助剂不固溶进入碳化硅晶格、烧结助剂之间不反应形成结构复杂的低热导率相,烧结助剂容易结晶晶化,不残留或少残留玻璃相;添加高热导率第二相.
Abstract
SiC ceramic is widely used as a kind of high thermal conductivity material.Based on the research progress at home and abroad,this paper discusses the thermal conductivity mechanism and influencing factors of SiC ceramic.It is proposed that impurities,pores and grain boundaries are the main factors affecting the thermal conductivity of SiC ceramic.And reducing impurities,pores and grain boundaries is conducive to improve thermal conductivity.The suggestion for preparing high thermal conductivity SiC ceramic is to increasing the bulk density of SiC ceramic to reduce porosity,increasing the SiC grain size to reduce grain boundaries,reducing the content and types of sintering additives without decreasing the bulk density,ensuring that the sintering additives do not dissolve into the SiC lattice and react with each other to form low thermal conductivity phases with a complex structure,ensuring that the sintering additives are easy to crystallize with little or no residual glass phases,and by adding a second phase with high thermal conductivity.
关键词
碳化硅陶瓷/热导率/杂质/气孔/晶界Key words
SiC ceramic/thermal conductivity/impurity/pore/grain boundary引用本文复制引用
基金项目
国家自然科学基金(51902358)
国家自然科学基金(12004016)
中原工学院重大项目培育计划(21100071)
河南省自然科学基金(202300410513)
中原工学院基本科研业务费专项(K2019QN004)
大学生创新创业训练计划(202310465002)
河南省科技攻关计划(232102220068)
出版年
2024
NETL
NSTL
万方数据