Individual Dopant Nature in Si Lateral Nano-pn Junctions

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外文摘要：In this work, we report the experimental observation of dopant signature in nanoscale ultra-thin SOI pn junctions. At temperatures below 30 K, we observed current fluctuations as random telegraph signal (RTS) in the dark and under light illumination. In the dark, two levels of RTS have been observed, suggesting that a charge moving as part of diffusion current may be trapped by an ionized dopant in the depletion layer. The RTS under light illumination has been observed only in pn junction devices, but not in pin junction devices, suggesting that the RTS is promoted in pn junctions due to trapping and detrapping of photogenerated carriers by donor-acceptor pair in the depletion layer. Observation of potential fluctuations due to trapping and detrapping events by Kelvin probe force microscopy (KFM) has also been reported. These results illustrate the nature of individual dopants in nanoscale pn junctions and their impact on device characteristics.

外文关键词：

Nanoscale pn junctionindividual dopantKFMRTS

作者：

Sri PURWIYANTI、Arief UDHIARTO、Roland NOWAK、Daniel MORARU、Takeshi MIZUNO、Djoko HARTANTO、Ryszard JABLONSKI、Michiharu TABE

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作者单位：

Research Institute of Electronics, Shizuoka University 3-5-1 Johoku, Naka-ku, Hamamatsu, 432-8011 Japan,Department of Electrical Engineering, Universitas Indonesia, Depok 16424, Indonesia

Research Institute of Electronics, Shizuoka University 3-5-1 Johoku, Naka-ku, Hamamatsu, 432-8011 Japan,Institute of Metrology and Biomedical Engineering, Warsaw Univ. of Technology, Sw. A. Boboli 8， 02-525 Warsaw

Research Institute of Electronics, Shizuoka University 3-5-1 Johoku, Naka-ku, Hamamatsu, 432-8011 Japan

Department of Electrical Engineering, Universitas Indonesia, Depok 16424, Indonesia

Institute of Metrology and Biomedical Engineering, Warsaw Univ. of Technology, Sw. A. Boboli 8， 02-525 Warsaw

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出版年：

2013

電子情報通信学会技術研究報告

ISSN：0913-5685

年,卷(期)：2013.112(445)