首页|ZnS/ZnO heterojunction as photoelectrode: Type Ⅱ band alignment towards enhanced photoelectrochemical performance

ZnS/ZnO heterojunction as photoelectrode: Type Ⅱ band alignment towards enhanced photoelectrochemical performance

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  • NETL
  • NSTL
  • Elsevier
Heterojunction structures are attracting lots of attention for enhancing the electron injection across the interface. The ZnS/ZnO one-dimensional heterojunction film was firstly prepared via a chemical sulfidization following hydrothermal reaction. The hetero-structure was characterized as ZnS(blende)/ZnO(wurtzite) shell-core nanorods via XRD, SEM and TEM. A type II band alignment structure of ZnS/ZnO composite was synthesized via a temperate condition proved by PLS and XPS. The values for valence band offset (VBO) and conduction band offset (CBO) were calculated to be 0.96 eV and 1.25 eV, respectively. The special electron structure in the heterojunction helped reduce the energy barrier height at the interface and enhance the separation of photo-generated carriers. Thus, the photoelectrochemical performance was highly improved, and a photocurrent density of 380 μA/cm~2 at 0.9 V (vs. Ag/AgCl) was obtained.

ZnS/ZnO heterojunctionElectron injectionPEC

Penghui Guo、Jiangang Jiang、Shaohua Shen、Liejin Guo

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International Research Center for Renewable Energy, State Key Laboratory of Multiphase Flow in Power Engineering, Xi'an jiaotong University, Shaanxi 710049, China

2013

10.1016/j.ijhydene.2013.01.184

International journal of hydrogen energy

International journal of hydrogen energy

ISTP
ISSN：0360-3199
年,卷(期)：2013.38(29)
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