摘要
通过将缺电子单元BDOPV的二氟和二氯取代形式与相对弱的供体部分二氯二噻吩乙烯(ClTVT)偶联得到两种供体-受体聚合物(D-A)。氯化和氟化BDOPV聚合物掺杂器件的电导率和功率因数不同。含N-DMBI的氯化和氟化聚合物分别获得38.3和16.1s cm(-1)的高电子导电率,含CoCp2的氯化和氟化聚合物分别获得12.4和2.4s cm(-1)。相应的功率因数分别为22.7、7.6、39.5和8.0μW m(-1 k-2.掺杂N-DMBi的PCLTVT具有良好的空气稳定性，掺杂浓度为50 mol%的N-DMBi的器件在空气中222天后电子电导率保持在4.9s m(-1)，其中掺氮聚合物在空气中存储时间最长，热电功率因数为9.3μW m(-1)K-2.这些观察结果与掠入射广角x射线散射和原子力显微镜确定的形貌一致。
Abstract
Two donor-acceptor (D-A) polymers are obtained by coupling difluoro- and dichloro-substituted forms of the electron-deficient unit BDOPV and the relatively weak donor moiety dichlorodithienylethene (ClTVT). The conductivity and power factors of doped devices are different for the chlorinated and fluorinated BDOPV polymers. A high electron conductivity of 38.3 and 16.1 S cm(-1) are obtained from the chlorinated and fluorinated polymers with N-DMBI, respectively, and 12.4 and 2.4 S cm(-1) are obtained from the chlorinated and fluorinated polymers with CoCp2, respectively, from drop-cast devices. The corresponding power factors are 22.7, 7.6, 39.5, and 8.0 mu W m(-1) K-2, respectively. Doping of PClClTVT with N-DMBI results in excellent air stability; the electron conductivity of devices with 50 mol% N-DMBI as dopant remained up to 4.9 S m(-1) after 222 days in the air, the longest for an n-doped polymer stored in air, with a thermoelectric power factor of 9.3 mu W m(-1) K-2. However, the conductivity of PFClTVT-based devices can hardly be measured after 103 days. These observations are consistent with morphologies determined by grazing incidence wide angle X-ray scattering and atomic force microscopy.
NETL
NSTL
Wiley