首页|Seed-assisted growth of large-area (3'-In2Se3 ferroelectric thin films
Seed-assisted growth of large-area (3'-In2Se3 ferroelectric thin films
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NETL
NSTL
Elsevier
The recent discovery of two-dimensional ferroelectric semiconductors, such as In2Se3, has opened promising avenues for ultra-thin micro-nano electronic devices, and energy-efficient neuromorphic systems. Despite these exciting prospects, achieving large-area, high-quality, layer-controlled growth of single-phase In2Se3 remains a considerable challenge. In this study, we present a seed-assisted strategy for growing uniform, centimeter-scale (3'-In2Se3 thin films by mixing In2O3 and In2Se3 single crystals in a specific ratio. The resulting (3'-In2Se3 phase and composition are verified through X-ray diffraction, transmission electron microscopy, and Raman spectroscopy. Furthermore, the ferroelectric properties and domain configurations have been characterized by using polarized light microscopy and piezoresponse force microscopy. Importantly, we investigate the topological evolution of ferroelectric domains across films with varying thicknesses, revealing insights into domain structure modulation. This growth method not only provides a scalable route for synthesizing similar ferroelectric twodimensional materials but also a possibility for the practical integration of (3'-In2Se3 in optoelectronic, neuromorphic, and other advanced micro-nano electronic applications.
Indium selenideSeed assisted growthChemical vapor depositionRoom temperature ferroelectricityFerroelectric domainIN2SE3
NETL
NSTL
Elsevier
