首页|A new tunable floating memristor emulator circuit with long-term memory
A new tunable floating memristor emulator circuit with long-term memory
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NETL
NSTL
Elsevier
In this research article, we propose a tunable floating-type memristor emulator circuit with long-term memory (LTM) capabilities. The overall circuit consists of a Voltage Differential Transconductance Amplifier (VDTA), a Voltage Differential Complementary Amplifier (VDCA), and other basic components. The proposed emulator effectively prevents charge leakage on the capacitor by incorporating a switching circuit, thereby achieving longterm memory functionality. The emulator operates stably at a frequency of 10 MHz and supports seamless switching between incremental and decremental modes by altering the polarity of the input voltage. Moreover, the emulator exhibits excellent tunability, allowing adjustments to the equivalent memristor model by modifying the bias voltage and the aspect ratio of MOS transistors. The proposed emulator has been laid out and simulated using TSMC 0.18 mu m process parameters in the Cadence Virtuoso platform. The simulation results align perfectly with the design and analysis, confirming the feasibility of the circuit. Finally, we explore potential applications of the proposed emulator in read-write circuit and memristor array circuit.
NETL
NSTL
Elsevier
