首页|Improved positive bias temperature instability of n-type vertical C-shaped-channel nanosheet FET by forming gas annealing

Improved positive bias temperature instability of n-type vertical C-shaped-channel nanosheet FET by forming gas annealing

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  • NETL
  • NSTL
  • Elsevier
In this article, the influence of Forming Gas Annealing (FGA) on the Positive Bias Temperature Instability (PBTI) characteristics of n-vertical C-shaped-channel nanosheet FET (n-VCNFET) is studied. The experimental results show that the extra FGA can significantly suppress both the initial and generated interface traps in PBTI. Moreover, in ultra-fast PBTI the pre-existing trap and total trap of VCNFET due to FGA decreases by 35 % and 31 %, respectively. The energy level of the oxide trap under PBTI and recovery doesn't change, in other words, the FGA induces the oxide trap density of the devices to decrease by 36 % at 125 degrees C and 1.4 V VOV. The optimization effect of FGA annealing has been further confirmed from the perspective of trap generation. It provides a guideline for the PBTI improvement of VCNFET in trap scopes.

ReliabilityPositive Bias temperature instability (PBTI)Nanosheet (NS)Vertical C -shaped-channel Nanosheet FET(VCNFET)Forming gas annealing (FGA)Trap generationFRAMEWORK

Shi, Yunfei、Jiang, Songyi、Yang, Hong、Zhang, Yongkui、Zhou, Longda、Ji, Zhigang、Liu, Qianqian、Wang, Qi、Zhu, Huilong、Luo, Jun、Wang, Wenwu

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Chinese Acad Sci||Univ Chinese Acad Sci

National Key Laboratory of Science and Technology on Micro Nano Fabrication

Chinese Acad Sci

2025

10.1016/j.mee.2025.112357

Microelectronic engineering

Microelectronic engineering

SCI
ISSN：0167-9317
年,卷(期)：2025.299(Sep.)
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