首页|Comprehensive analysis and investigation of GaN LNA for 3-4 GHz using different gate-drain spacing
Comprehensive analysis and investigation of GaN LNA for 3-4 GHz using different gate-drain spacing
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NETL
NSTL
Elsevier
This work investigates the impact of the device technological parameter - gate-drain access region spacing (LGD) for GaN High Electron Mobility Transistors (HEMTs), on the design of low noise amplifiers (LNAs) for the 3-4 GHz range. We compare two GaN LNA variants, characterized by LGD values of 0.875 mu m and 1 mu m, to highlight the significance of gate-drain spacings in determining performance metrics. This study contributes insights into the effect of gate-drain spacing on the GaN LNAs, and evaluates the RF characteristics, Noise Fig. (NF), and power metrics for different LGD values. Based on our findings, we assert that the 0.875 mu m LGD LNA exhibits superior performance over its counterpart in the evaluated benchmarks, along with the physical reasoning.
GaN HEMTGate-to-drain spacingLow noise amplifier (LNA)Noise figureWireless communicationNOISEPERFORMANCEFREQUENCYIMPACT
NETL
NSTL
Elsevier
