Advanced materials for optics and electronics2026,Vol.36Issue(10) :e11704.1-e11704.11.DOI:10.1002/adfm.202511704

Steep-Switching Memory FET for Noise-Resistant Reservoir Computing System

Seongkweon Kang Jaerok Kim Sang-Min Lee Sungpyo Baek Saeroonter Oh Yoonmyung Lee Sungjoo Lee
Advanced materials for optics and electronics2026,Vol.36Issue(10) :e11704.1-e11704.11.DOI:10.1002/adfm.202511704

Steep-Switching Memory FET for Noise-Resistant Reservoir Computing System

Seongkweon Kang 1Jaerok Kim 2Sang-Min Lee 3Sungpyo Baek 3Saeroonter Oh 1Yoonmyung Lee 2Sungjoo Lee4
扫码查看

作者信息

  • 1. Department of Semiconductor Convergence Engineering Sungkyunkwan University Suwon 16419,South Korea
  • 2. Department of Electrical and Computer Engineering Sungkyunkwan University Suwon 16419,South Korea
  • 3. SKKU Advanced Institute of Nanotechnology(SAINT)Sungkyunkwan University Suwon 16419,South Korea||Department of Nano Science and Technology Sungkyunkwan University Suwon 16419,South Korea
  • 4. SKKU Advanced Institute of Nanotechnology(SAINT)Sungkyunkwan University Suwon 16419,South Korea||Department of Nano Science and Technology Sungkyunkwan University Suwon 16419,South Korea||Department of Nano Engineering Sungkyunkwan University Suwon 16419,South Korea
  • 折叠

Abstract

Most physical reservoir computing (RC) systems require complex prep- rocessing steps such as binarization under noise-free conditions and challenging real-time data processing because of latency and increase system complexity. This paper proposes a noise-resistant RC system that reduces the necessity for preprocessing by utilizing a steep-switching memory FET. The proposed device achieved steep-switching characteristics (SS_(PGM) = 19 mV dec~(-1), SS_(ERS) = 23 mV dec~(-1)) by operating in a stable state for a negative capacitance, which is established through the gate-stack of a ferroelectric insulator (CuInP_2S_6) and an insulator (h-BN). Additionally, it shows wide hysteresis (4.72 V) through dipole coupling between CuInP_2S_6 and ferroelectric semiconductor (α-In_2Se_3). Sub-60 mV dec~(-1) characteristics reduce the probability of undefined reservoir state occurrences and demonstrate the ability to filter noisy signals without additional preprocessing. Furthermore, its wide hysteresis-based memory enables non-linear transformations that incorporate temporal information from input signals, facilitating complex tasks such as temporal signal classification. A noise-resistant RC system is developed using steep-switching memory FET and validate its performance using noisy MNIST (15 dB: 95.9%, noise-free: 96.3%) and speech recognition (15 dB: 86.0%, noise-free: 86.7%) tasks, satisfying international noise-tolerance standards. This study highlights the potential of enhancing real-time data processing and system operating efficiency for data-centric computing systems.

Key words

2D ferroelectric/noise-resistant reservoir computing/reservoir computing/steep-switching memory FET

引用本文复制引用

出版年

2026
Advanced materials for optics and electronics

Advanced materials for optics and electronics

ISSN:1616-301X
参考文献量44
段落导航相关论文