Advanced materials for optics and electronics2026,Vol.36Issue(10) :e18429.1-e18429.12.DOI:10.1002/adfm.202518429

Realizing High Performance in Commercial Bi0.5Sb1.5Te3 Thermoelectric Material via Balancing the Magnetic Doping and Interface Engineering

Shuankui Li Danning Ma Yu Zhang Bu Li Zhaosong Wang Jiye Zhang Fusheng Liu Kai Guo
Advanced materials for optics and electronics2026,Vol.36Issue(10) :e18429.1-e18429.12.DOI:10.1002/adfm.202518429

Realizing High Performance in Commercial Bi0.5Sb1.5Te3 Thermoelectric Material via Balancing the Magnetic Doping and Interface Engineering

Shuankui Li 1Danning Ma 1Yu Zhang 1Bu Li 1Zhaosong Wang 1Jiye Zhang 2Fusheng Liu 3Kai Guo1
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作者信息

  • 1. School of Physics and Materials Science Guangzhou University Guangzhou 510006,China
  • 2. Key Lab of Si-based Information Materials&Devices and Integrated Circuits Design Department of Education of Guangdong Province Guangzhou 510006,China(S.Li,K.Guo) School of Materials Science and Engineering Shanghai University 99 Shangda Road,Shanghai 200444,China
  • 3. College of Materials Science and Engineering Guangdong Provincial Key Laboratory of New Energy Materials Service Safety Shenzhen University Shenzhen 518060,China
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Abstract

As the only commercial available thermoelectric material, Bi2Te3-based alloys offer exceptional near-room temperature performance, while it is complicated to realize further improvement. Incorporating magnetic impurity is an effective strategy to decouple the relationship between thermal and electrical transport for improved TE performance, while the design of magnetic impurity with precisely tailored chemical components, size, distribution, and crystallinity remains a big challenge. Herein, the amorphous FeO_x layers with weak ferromagnetism are introduced to the grain boundaries of commercial p-type Bi_(0.5)Sb_(1.5)Te_3 materials to improve its TE performance. The special serrated shape and weak-ferromagnetism of the FeO_x layer promote high mobility and Seebeck coefficients of the ALD coated samples. The phonon scattering at the FeO_x layer reduce lattice thermal conductivity by over 30%. Consequently, the optimized sample achieves the maximum and average ZT of 1.42 at 330 K and 1.1 within 300-525 K, respectively, marking increases of 43.7% and 37.5% compared to the matrix. This work delves into the role of thermo-electro-magnetic interactions in ameliorating TE performance and offers inspiration for the development of high-efficiency TE modules.

Key words

atomic layer deposition/Bismuth telluride/Interface engineering/Magnetic doping/Thermoelectric performance

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出版年

2026
Advanced materials for optics and electronics

Advanced materials for optics and electronics

ISSN:1616-301X
参考文献量45
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