Spin Defects in Hexagonal Boron Nitride as 2D Strain Sensors

Zhao Mu ¹Zhaowei Zhang ²Jules Fraunie ³Cedric Robert ³Gregory Seine ⁴Bernard Gil ⁵Guillaume Cassabois ⁶Vincent Jacques⁵

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作者信息

1. MOE Key Laboratory of Micro and Nano Systems for Aerospace, School of Mechanical Engineering, Northwestern Polytechnical University, Xi'an, China||Laboratoire Charles Coulomb, Universite de Montpellier and CNRS, Montpellier, France
2. School of Sciences, Great Bay University, Dongguan, China||State Key Laboratory of Silicon and Advanced Semiconductor Materials, Zhejiang University, Hangzhou, China
3. Universite de Toulouse, INSA-CNRS-UPS, LPCNO, Toulouse, France
4. CEMES-CNRS and Universite de Toulouse, Toulouse, France
5. Laboratoire Charles Coulomb, Universite de Montpellier and CNRS, Montpellier, France
6. Laboratoire Charles Coulomb, Universite de Montpellier and CNRS, Montpellier, France||Institut Universitaire de France, Paris, France
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Abstract

Lattice deformation is a powerful way to engineer the properties of 2D materials, making their precise measurement an important challenge for both fundamental science and technological applications. Here, we demonstrate that boron-vacancy (V_B~-) color centers in hexagonal boron nitride (hBN) enable quantitative strain sensing with sub-micrometer spatial resolution. Using this approach, we precisely quantify the strain-induced shift of the E_(2g) Raman mode in a multilayer hBN flake under uniaxial stress, establishing V_B~- centers as a new tool for strain metrology in van der Waals heterostructures. Beyond strain sensing, our work also highlights the unique multimodal sensing functionalities offered by V_B~- centers, which will be valuable for future studies of strain-engineered 2D materials.

Key words

2D materials/hBN/quantum sensing/Raman spectroscopy/strain

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出版年

2026

Advanced materials for optics and electronics

ISSN：1616-301X

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