首页|Single-electron tunneling through multiple-donor QDs in high-concentration co-doped Si nanoscale transistors
Single-electron tunneling through multiple-donor QDs in high-concentration co-doped Si nanoscale transistors
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NSTL
In co-doped semiconductors, the level of doping and the balance between donors and acceptors can dictate the degree of compensation and implicitly the type of conductivity, potentially allowing the control of the metal-insulator transition. Here, we experimentally analyze the effect of co-doping at high concentrations in nano-channel transistors, with donor and acceptor concentrations estimated to be N_D≈2.0×10~(20) and N_A≈5.3×10~(19) cm~(-3), as well as the importance of low dimensionality, for observing single-electron tunneling (SET) operation (so far at low temperature). The critical role of dimensionality in defining the conditions for SET transport, mediated by one or only a few QDs induced by dopant clusters, is demonstrated by numerical simulations of random dopant distributions.
NSTL
