查看更多>>摘要：Based on the construction of the 8-inch fabrication line, advanced process technology of 8-inch wafer, as well as the fourth-generation high-voltage double-diffused metal-oxide semiconductor (DMOS+) insulated-gate bipolar transistor (IGBT) technology and the fifth-generation trench gate IGBT technology, have been developed, realizing a great-leap forward technological development for the manufacturing of high-voltage IGBT from 6-inch to 8-inch.The 1600 A/1.7 kV and 1500 A/3.3 kV IGBT modules have been successfully fabricated, qualified, and applied in rail transportation traction system.
查看更多>>摘要：A high-throughput multi-plume pulsed-laser deposition (MPPLD) system has been demonstrated and compared to previous techniques.Whereas most combinatorial pulsedlaser deposition (PLD) systems have focused on achieving thickness uniformity using sequential multilayer deposition and masking followed by post-deposition annealing, MPPLD directly deposits a compositionally varied library of compounds using the directionality of PLD plumes and the resulting spatial variations of deposition rate.This system is more suitable for high-throughput compound thin-film fabrication.
查看更多>>摘要：Given the demand for constantly scaling microelectronic devices to ever smaller dimensions, a SiO2 gate dielectric was substituted with a higher dielectric-constant material, Hf(Zr)O2, in order to minimize current leakage through dielectric thin film.However, upon interfacing with high dielectric constant (high-κ) dielectrics, the electron mobility in the conventional Si channel degrades due to Coulomb scattering, surface-roughness scattering, remotephonon scattering, and dielectric-charge trapping.Ⅲ-Ⅴ and Ge are two promising candidates with superior mobility over Si.Nevertheless, Hf(Zr)O2/Ⅲ-Ⅴ(Ge) has much more complicated interface bonding than Si-based interfaces.Successful fabrication of a high-quality device critically depends on understanding and engineering the bonding configurations at Hf(Zr)O2/Ⅲ-Ⅴ(Ge) interfaces for the optimal design of device interfaces.Thus, an accurate atomic insight into the interface bonding and mechanism of interface gap states formation becomes essential.Here, we utilize firstprinciple calculations to investigate the interface between HfO2 and GaAs.Our study shows that As-As dimer bonding, Ga partial oxidation (between 3+ and 1+) and Ga-dangling bonds constitute the major contributions to gap states.These findings provide insightful guidance for optimum interface passivation.
查看更多>>摘要：To grow high-quality and large-size monocrystalline silicon at low cost, we proposed a single-seed casting technique.To realize this technique, two challenges-polycrystalline nucleation on the crucible wall and dislocation multiplication inside the crystal-needed to be addressed.Numerical analysis was used to develop solutions for these challenges.Based on an optimized furnace structure and operating conditions from numerical analysis, experiments were performed to grow monocrystalline silicon using the single-seed casting technique.The results revealed that this technique is highly superior to the popular high-performance multicrystalline and multiseed casting mono-like techniques.
查看更多>>摘要：Modeling vapor pressure is crucial for studying the moisture reliability of microelectronics, as high vapor pressure can cause device failures in environments with high temperature and humidity.To minimize the impact of vapor pressure, a super-hydrophobic (SH) coating can be applied on the exterior surface of devices in order to prevent moisture penetration.The underlying mechanism of SH coating for enhancing device reliability, however, is still not fully understood.In this paper, we present several existing theories for predicting vapor pressure within microelectronic materials.In addition, we discuss the mechanism and effectiveness of SH coating in preventing water vapor from entering a device, based on experimental results.Two theoretical models, a micro-mechanics-based whole-field vapor pressure model and a convection-diffusion model, are described for predicting vapor pressure.Both methods have been successfully used to explain experimental results on uncoated samples.However, when a device was coated with an SH nanocomposite, weight gain was still observed, likely due to vapor penetration through the SH surface.This phenomenon may cast doubt on the effectiveness of SH coatings in microelectronic devices.Based on current theories and the available experimental results, we conclude that it is necessary to develop a new theory to understand how water vapor penetrates through SH coatings and impacts the materials underneath.Such a theory could greatly improve microelectronics reliability.
查看更多>>摘要：High-speed and precision positioning are fundamental requirements for high-acceleration low-load mechanisms in integrated circuit (IC) packaging equipment.In this paper, we derive the transient nonlinear dynamicresponse equations of high-acceleration mechanisms, which reveal that stiffness, frequency, damping, and driving frequency are the primary factors.Therefore, we propose a new structural optimization and velocity-planning method for the precision positioning of a high-acceleration mechanism based on optimal spatial and temporal distribution of inertial energy.For structural optimization, we first reviewed the commonly flexible multibody dynamic optimization using equivalent static loads method (ESLM), and then we selected the modified ESLM for optimal spatial distribution of inertial energy;hence, not only the stiffness but also the inertia and frequency of the real modal shapes are considered.For velocity planning, we developed a new velocity-planning method based on nonlinear dynamic-response optimization with varying motion conditions.Our method was verified on a high-acceleration die bonder.The amplitude of residual vibration could be decreased by more than 20％ via structural optimization and the positioning time could be reduced by more than 40％ via asymmetric variable velocity planning.This method provides an effective theoretical support for the precision positioning of high-acceleration low-load mechanisms.
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