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中国物理B（英文版）
中国物理B（英文版）

欧阳钟灿

月刊

1674-1056

010-82649026 82649519

100080

北京603信箱

中国物理B（英文版）/Journal Chinese Physics　BCSCDCSTPCD北大核心EISCI
查看更多>>该刊与《物理学报》是中国物理学会主办的物理学英文和中文的综合性国际学术月刊。刊登物理学科领域中，国内外未曾公开发表的具有创新性的科学研究最新成果。内容包括物理学各领域的理论、实验技术及应用。两刊内容不重复。两刊以论文水平高、创新性强，发表速度快的特点，受到国内外物理学工作者的好评和关注。被国际著名的SCI等10种以上检索系统收录。曾多次被评为中国科学院优秀期刊一等奖，1999，2003，2005年荣获第一、第二和第三届国家期刊奖，2001年被国家新闻出版总署评为“中国期刊方阵”中的双高（高知名度、高学术水平）期刊。2001，2002，2003年两刊都评为百种中国杰出期刊。
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    Effects of Mg-doping temperature on the structural and electrical properties of nonpolar a-plane p-type GaN films

    陈凯赵见国丁宇胡文晓...
    698-704页
    查看更多>>摘要：Nonpolar(11-20)a-plane p-type GaN films were successfully grown on r-plane sapphire substrate with the metal-organic chemical vapor deposition(MOCVD)system.The effects of Mg-doping temperature on the structural and electrical properties of nonpolar p-type GaN films were investigated in detail.It is found that all the surface morphology,crystalline quality,strains,and electrical properties of nonpolar a-plane p-type GaN films are interconnected,and are closely related to the Mg-doping temperature.This means that a proper performance of nonpolar p-type GaN can be expected by optimizing the Mg-doping temperature.In fact,a hole concentration of 1.3 x 1018 cm-3,a high Mg activation efficiency of 6.5％,an activation energy of 114 meV for Mg acceptor,and a low anisotropy of 8.3％in crystalline quality were achieved with a growth temperature of 990 ℃.This approach to optimizing the Mg-doping temperature of the nonpolar a-plane p-type GaN film provides an effective way to fabricate high-efficiency optoelectronic devices in the future.
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    Majorana noise model and its influence on the power spectrum

    陈书梦丁思凡张振涛刘东...
    705-715页
    查看更多>>摘要：Majorana quantum computation offers a potential approach to securely manipulating and storing quantum data in a topological manner that may effectively resist the decoherence induced by local noise.However,actual Majorana qubit setups are susceptible to noise.In this study,from a quantum dynamics perspective,we develop a noise model for Majo-rana qubits that accounts for quasi-particle poisoning and Majorana overlapping with fluctuation.Furthermore,we focus on Majorana parity readout methodologies,specifically those leveraging an ancillary quantum dot,and carry out an in-depth exploration of continuous measurement techniques founded on the quantum jump model of a quantum point contact.Utilizing these methodologies,we proceed to analyze the influence of noise on the afore-mentioned noise model,employ-ing numerical computation to evaluate the power spectrum and frequency curve.In the culmination of our study,we put forward a strategy to benchmark the presence and detailed properties of noise in Majorana qubits.
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    Quantitative determination of the critical points of Mott metal-insulator transition in strongly correlated systems

    牛月坤倪煜王建利陈雷鸣...
    716-722页
    查看更多>>摘要：Mottness is at the heart of the essential physics in a strongly correlated system as many novel quantum phenomena occur in the metallic phase near the Mott metal-insulator transition.We investigate the Mott transition in a Hubbard model by using the dynamical mean-field theory and introduce the local quantum state fidelity to depict the Mott metal-insulator transition.The local quantum state fidelity provides a convenient approach to determining the critical point of the Mott transition.Additionally,it presents a consistent description of the two distinct forms of the Mott transition points.
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    Physical mechanism of oxygen diffusion in the formation of Ga2O3 Ohmic contacts

    徐宿雨于淼袁东阳彭博...
    723-730页
    查看更多>>摘要：The formation of low-resistance Ohmic contacts in Ga2O3 is crucial for high-performance electronic devices.Con-ventionally,a titanium/gold(Ti/Au)electrode is rapidly annealed to achieve Ohmic contacts,resulting in mutual diffusion of atoms at the interface.However,the specific role of diffusing elements in Ohmic contact formation remains unclear.In this work,we investigate the contribution of oxygen atom diffusion to the formation of Ohmic contacts in Ga2O3.We prepare a Ti/Au electrode on a single crystal substrate and conduct a series of electrical and structural characterizations.Using density functional theory,we construct a model of the interface and calculate the charge density,partial density of states,planar electrostatic potential energy,and I-V characteristics.Our results demonstrate that the oxygen atom diffusion effectively reduces the interface barrier,leading to low-resistance Ohmic contacts in Ga2O3.These findings provide valu-able insights into the underlying mechanisms of Ohmic contact formation and highlight the importance of considering the oxygen atom diffusion in the design of Ga2O3-based electronic devices.
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    Resistive switching behavior and mechanism of HfOx films with large on/off ratio by structure design

    黄香林王英黄慧香段理...
    731-737页
    查看更多>>摘要：Different bilayer structures of HfOx/Ti(TiOx)are designed for hafnium-based memory to investigate the switching characteristics.The chemical states in the films and near the interface are characterized by x-ray photoelectron spectroscopy,and the oxygen vacancies are analyzed.Highly improved on/off ratio(～104)and much uniform switching parameters are observed for bilayer structures compared to single layer HfOx sample,which can be attributed to the modulation of oxygen vacancies at the interface and better control of the growth of filaments.Furthermore,the reliability of the prepared samples is investigated.The carrier conduction behaviors of HfOx-based samples can be attributed to the trapping and de-trapping process of oxygen vacancies and a filamentary model is proposed.In addition,the rupture of filaments during the reset process for the bilayer structures occur at the weak points near the interface by the recovery of oxygen vacancies accompanied by the variation of barrier height.The re-formation of fixed filaments due to the residual filaments as lightning rods results in the better switching performance of the bilayer structure.
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    Electrically controllable spin filtering in zigzag phosphorene nanoribbon based normal-antiferromagnet-normal junctions

    李锐岗刘军丰汪军
    738-743页
    查看更多>>摘要：We investigated the electric controllable spin-filtering effect in a zigzag phosphorene nanoribbon(ZPNR)based normal-antiferromagnet-normal junction.Two ferromagnets are closely coupled to the edges of the nanoribbon and form the edge-to-edge antiferromagnetism.Under an in-plane electric field,the two degenerate edge bands of the edge-to-edge antiferromagnet split into four spin-polarized sub-bands and a 100％spin-polarized current can be easily induced with the maximal conductance 2e2/h.The spin polarization changes with the strength of the electric field and the exchange field,and changes sign at opposite electric fields.The spin-polarized current switches from one edge to the other by reversing the direction of the electric field.The edge current can also be controlled spatially by changing the electric potential of the scattering region.The manipulation of edge current is useful in spin-transfer-torque magnetic random-access memory and provides a practical way to develop controllable spintronic devices.
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    Electric modulation of the Fermi arc spin transport via three-terminal configuration in topological semimetal nanowires

    祝光宇宁纪爱王建坤刘心洁...
    744-748页
    查看更多>>摘要：Spin-momentum locking is a key feature of the topological surface state,which plays an important role in spintronics.The electrical detection of current-induced spin polarization protected by the spin-momentum locking in nonmagnetic sys-tems provides a new platform for developing spintronics,while previous studies were mostly based on magnetic materials.In this study,the spin transport measurement of Dirac semimetal Cd3As2 was studied by three-terminal geometry,and a hysteresis loop signal with high resistance and low resistance state was observed.The hysteresis was reversed by reversing the current direction,which illustrates the spin-momentum locking feature of Cd3As2.Furthermore,we realized the on-off states of the spin signals through electric modulation of the Fermi arc via the three-terminal configuration,which enables the great potential of Cd3As2 in spin field-effect transistors.
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    Distinct behavior of electronic structure under uniaxial strain in BaFe2As2

    李佳俊Giao Ngoc Phan王兴玉杨发枝...
    749-754页
    查看更多>>摘要：We report a study of the electronic structure of BaFe2As2 under uniaxial strains using angle-resolved photoemission spectroscopy and transport measurements.Two electron bands at the My point,with an energy splitting of 50 meV in the strain-free sample,shift downward and merge into each other under a large uniaxial strain,while three hole bands at theΓ point shift downward together.However,we also observed an enhancement of the resistance anisotropy under uniaxial strains by electrical transport measurements,implying that the applied strains strengthen the electronic nematic order in BaFe2As2.These observations suggest that the splitting of these two electron bands at the My point is not caused by the nematic order in BaFe2As2.
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    Enhanced conductivity and weakened magnetism in Pb-doped Sr2IrO4

    岳智来甄伟立牛瑞焦珂珂...
    755-761页
    查看更多>>摘要：Group IV element Pb has been selected as the dopant to dope at the Sr site of Sr2IrO4.It is exciting to find that the single-phase crystal structure could be maintained with a high Pb doping level of up to x=0.3 in Sr2-xPbxIrO4.The map-ping data obtained from energy-dispersive x-ray spectroscopy analyses give solid evidence that the Pb ions are uniformly distributed in the Sr2IrO4 matrix.The incorporation of Pb leads to a moderate depression of the canted antiferromagnetic ordering state.The electrical conductivity could be greatly enhanced when the Pb doping content is higher than x=0.2.The present results give a fresh material base to explore new physics in doped Sr2IrO4 systems.
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    Majorana tunneling in a one-dimensional wire with non-Hermitian double quantum dots

    牛鹏斌罗洪刚
    762-768页
    查看更多>>摘要：The combination of non-Hermitian physics and Majorana fermions can give rise to new effects in quantum transport systems.In this work,we investigate the interplay of PT-symmetric complex potentials,Majorana tunneling and interdot tunneling in a non-Hermitian double quantum dots system.It is found that in the weak-coupling regime the Majorana tunneling has pronounced effects on the transport properties of such a system,manifested as splitting of the single peak into three and a reduced 1/4 peak in the transmission function.In the presence of the PT-symmetric complex potentials and interdot tunneling,the 1/4 central peak is robust against them,while the two side peaks are tuned by them.The in-terdot tunneling only induces asymmetry,instead of moving the conductance peak,due to the robustness of the Majorana modes.There is an exceptional point induced by the union of Majorana tunneling and interdot tunneling.With increased PT-symmetric complex potentials,the two side peaks will move towards each other.When the exceptional point is passed through,these two side peaks will disappear.In the strong-coupling regime,the Majorana fermion induces a 1/4 conduc-tance dip instead of the three-peak structure.PT-symmetric complex potentials induce two conductance dips pinned at the exceptional point.These effects should be accessible in experiments.
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