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上海大学学报(英文版)
上海大学学报(英文版)

戴世强

季刊

1007-6417

jpsu_l@staff.shu.edu.cn

021-66135218

200444

上海市宝山区上大路99路上海大学124信箱

上海大学学报(英文版)/Journal Journal of Shanghai University(English Edition)
查看更多>>《Journal of Shanghai University》是在钱伟长校长的大力倡导和支持下于1997年6月创刊的。本刊由上海大学出版社出版,《上海大学学报》(英文版)编委会编辑, 上海大学期刊社发行。本刊设有“Reviews”,“Articles”,“Letters”,“Abstracts of Doctoral Dissertations”等栏目,报道范围涉及自然科学与工程技术的多种领域,主要有“应用数学和力学”,“信息技术”,“机电工程与自动化”,“材料科学与工程”等领域。 本刊重视学术论文的创新性。钱校长在本刊发刊词中把科研成果分为三类:第一类用新理论新方法解决新问题;第二类用新理论新方法解决老问题或用已有理论和方法解决新问题;第三类用已有理论和方法解决老问题。本刊将优先刊登第一类学术论文,也发表一些第二类学术论文,而不采用第三类论文。本刊只刊出未在正式刊物上公开发表过的研究论文。 本刊除刊登上海大学教师和研究生的最新研究成果外,也刊登其它高校及科研院所专家学者们的优秀学术论文,而且在论文的筛选和刊出上一视同仁。本刊尤其欢迎国家自然科学基金课题和国家“八六三”项目的研究论文以及海外留学生的研究论文,也欢迎资深学者的专题综述文章, 本刊也以“Letters”的形式报道学者们的阶段性研究成果。本刊主要向国外发行,向国外近20家文献检索刊物和数据库及近百所大学图书馆按期寄送。到目前为止,本刊已被国际多家重要检索刊物或数据库收录。它们是美国的“工程索引”(EI Page One),英国的“科学文摘”(SA-INSPEC),俄罗斯的“文摘杂志”(РЖ),日本的“科学技术文献速报”(CBST),美国的“剑桥科学文摘”(CSA),美国的“数学评论”(MR),美国的“应用力学评论”(AMR),德国的“数学文摘”(ZBI),美国的“化学文摘”(CA)等的收录期刊。本刊同时被国内4家全文数据库和多家专业文摘刊物收录。欢迎国内外专家学者投稿,有关投稿的具体要求见本刊征稿简则。本刊国内外公开发行, 可通过天津联合征订服务部、北京人天书店征订,也可直接向上海大学期刊社征订。
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    Examining micro-cavity parameters of top emission organic light-emitting diode with low-order resonant modes

    CAO JinWANG LiZHANG Jian-hua
    235-238页
    查看更多>>摘要:Emission characteristics of top emitting organic light-emitting devices (TOLEDs) with Ag as reflective anode,Al/Ag as semitransparent cathode and 90-160 nm [N-(1-naphthy1)-N-pheny1-amino] bipheny1/tris-(8-hydroxy quinoline) aluminum (NPB/Alq3) sandwiched in the electrodes are examined.The electroluminescence (EL) spectra of the TOLEDs are simulated based on the Fabry-Perot cavity theory.And the resonant modes in cavity structure of TOLEDs is discussed and clarified which can accurately describe the work principle of the devices. A fairly good match between calculated values and experimental data is achieved at different emission colors from bluish green to orange.

    Characteristics of bottom gate a-Si TFT array for AM-OLEDs

    ZHANG HaoCHEN Long-longSHI Ji-fengLI Chun-ya...
    239-241页
    查看更多>>摘要:The authors have fabricated bottom gate amorphous silicon thin film transistor (a-Si TFT) array using five-step lithography process.The device shows a field effect mobility of 0.43 cm2/(V·s),on/off ratio of 7.5×106 and threshold voltage of 0.87 V.The instability of a-Si TFT is ascribed to the defect state in the a-Si channel and SiNx/a-Si interface.The present a-Si TFT array with SiNx insulator could be a significant step towards the commercialization of active matrix organic lighting diode (AM-OLED) technology.

    Dependence of electrical and optical properties of IGZO films on oxygen flow

    SHI Ji-fengCHEN Long-longLI QianLI Xi-feng...
    242-244页
    查看更多>>摘要:Amorphous InGaZnO (a-IGZO) films were deposited on the corning eagle XG (EXG) glass substrates using magnetron sputtering method.The structure,surface morphology,electrical and optical properties of these films were investigated by X-ray diffraction (XRD),scanning electron microscopy (SEM),semiconductor parameter analyzer and spectrophotometry,respectively.The influence of oxygen flow on the electrical properties of IGZO thin films was studied,showing that increasing oxygen flow changes the resistivity with six orders of magnitude.The contact resistance of ITO/IGZO is 7.35× 10-2 Ω·cm2,which suggests that a good ohmic contact exists between In2O3:Sn (ITO) and IGZO film.

    Effect of annealing on wet etch of amorphous IGZO thin film

    CHEN Long-longSHI Ji-fengLI QianLI Xi-feng...
    245-247页
    查看更多>>摘要:Amorphous InGaZnO (a-IGZO) film is deposited on the glass substrate by radio-frequency sputtering and the influence of annealing on wet etch of a-IGZO films were investigated.The results show that etch rate of IGZO films decrease with the increase of annealing temperature.Etching taper angle is less than 60° and critical dimension (CD) loss is less than 1 μm in over-etching time of 30 s.The fact implies that IGZO films etching with oxalic acid may be a good wet etching way for the thin-film transistor (TFT) array process.

    High-brightness organic light-emitting diodes

    SHANG Yu-zhuLU Yan-fangYU Jian-ningZHANG Min-yan...
    248-251页
    查看更多>>摘要:The research of high-brightness organic light-emitting diodes,as an important branch of organic light-emitting diodes (OLEDs),makes it possible for achieving high-brightness lighting source and lasing.Heat dissipation and efficiency roll off,as two main factors,affect the brightness of the OLEDs heavily.In this paper,high-brightness OLEDs are obtained by utilizing pulse voltage,small areas and micro-cavity structure to minimize the effect of the two factors.The major advances,ongoing challenges and future perspectives of this research frontier are also critically discussed.

    High efficient and high color rendering index white organic light-emitting diodes

    ZHANG Min-yanSHANG Yu-zhuXU HongLU Yan-fang...
    252-255页
    查看更多>>摘要:We have fabricated high-efficient white organic light-emitting diodes (WOLEDs) using two types of electron transport materials with different electron mobility.The effect of the electron mobility on the device performance is discussed.In addition,to generate the desired white emission and high color rendering index,we perform the structure design of OLED,in which the functions of co-host of blue and green dopants on chromatic-stability are investigated.Experimental results find that the maximum color rendering index reaches as high as 91 at the voltage of 8 V.

    Platinum complexes as phosphorescent emitters in highly efficientorganic light-emitting diodes

    L(U) Yan-fangZHANG Min-yanSHANG Yu-zhuXU Hong...
    256-261页
    查看更多>>摘要:Applications of platinum complexes as phosphorescent emitters in high efficiency organic light-emitting diodes (OLEDs) were shortly discussed in this paper.Key recent studies on highly efficient blue,green,red and white-phosphorescent OLEDs based on Pt complexes are presented in terms of efficiency and color quality.

    Effects of ultrasonic bonding parameters on reliability of flip chip GaN-based light emitting diode

    YANG Lian-qiaoYUAN FangZHANG Jian-hua
    262-266页
    查看更多>>摘要:This work applied the ultrasonic bonding to package flip chip GaN-based light emitting diodes (flip chip LEDs) on Si substrates.The effects of ultrasonic bonding parameters on the reliability of flip chip GaN-based LED were investigated.In the sequent aging tests,samples were driven with a constant current of 80 mA for hundreds hours at the room temperature.It was found that the electroluminescence (EL) intensity variation had a large correlation to the ultrasonic power,and then to the bonding temperature and force.A high bonding temperature and ultrasonic power and a proper bonding force improved the EL intensity significantly.It was contributed to a strong atom inter-diffusion forming a stable joint at the bonding interface.The temperature fluctuation in the aging test was the main factor to generate a high inner stress forming delamination at the interface between the chip and Au bump.As a result,delamination had retarded the photons to emit out of the LED packaging and decay its EL intensity.

    Power test method for LED backlight LCD TVs and software development

    LIU ZhenZHANG Jian-hua
    267-271页
    查看更多>>摘要:As the appearance of local dimming technique,the current existing test methods are not suitable for testing the power consumption of the LCD TVs using the local dimming technique any longer. A test method appropriate to LED backlight LCD TVs using the local dimming technique is proposed in this paper,and then the test software is developed.The results demonstrate that the test software developed can show the real average power consumption of the LCD using local dimming technique,and by normalization the power consumption become comparable for not only local dimming LCD TVs but global dimming LCD TVs.Using the software developed in this paper,the ratio of power saving is clear when an LCD TV using the local dimming technique compared with one without local dimming technique.

    Numerical investigation on thermal properties of micro-pin-fin cooler

    ZHANG YanLIU Yang-mingFAN Jing-yuLIU Johan...
    272-278页
    查看更多>>摘要:Micro-pin-fin cooler mounted on the power chip enables the heat removal to meet modern microsystem requirement.Carbon nanotubes (CNTs) have been proven as a potential material for micro-coolers due to the superior thermal conductivity,good mechanical property and so forth,and there appear various applications of CNTs in the micro-cooler technology.In thepresent paper,an analysis of the thermal and hydraulic characteristics of the micro-pin-fin heat sink was conducted,whereair was used as the cooling medium and an impinging jet was introduced to enhance the heat transfer. Three-dimension computational fluid dynamics (CFD) simulations were carried out for micro-pin-fin coolers with various parameters,including the pin-fin size and pattern as well as the jet velocity and nozzle diameter.The flow field and thermal properties of the micro-pin-fin heat sink were obtained,and the heat removal efficiency was evaluated.