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中国物理B（英文版）
中国物理B（英文版）

欧阳钟灿

月刊

1674-1056

010-82649026 82649519

100080

北京603信箱

中国物理B（英文版）/Journal Chinese Physics　BCSCDCSTPCD北大核心EISCI
查看更多>>该刊与《物理学报》是中国物理学会主办的物理学英文和中文的综合性国际学术月刊。刊登物理学科领域中，国内外未曾公开发表的具有创新性的科学研究最新成果。内容包括物理学各领域的理论、实验技术及应用。两刊内容不重复。两刊以论文水平高、创新性强，发表速度快的特点，受到国内外物理学工作者的好评和关注。被国际著名的SCI等10种以上检索系统收录。曾多次被评为中国科学院优秀期刊一等奖，1999，2003，2005年荣获第一、第二和第三届国家期刊奖，2001年被国家新闻出版总署评为“中国期刊方阵”中的双高（高知名度、高学术水平）期刊。2001，2002，2003年两刊都评为百种中国杰出期刊。
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    Research of caged dynamics of clusters center atoms in Pd82Si18 amorphous alloy

    邓永和陈贝祁清华李兵兵...
    622-629页
    查看更多>>摘要：To date,there is still a lack of a comprehensive explanation for caged dynamics which is regarded as one of the intri-cate dynamic behaviors in amorphous alloys.This study focuses on Pd82Si 18 as the research object to further elucidate the underlying mechanism of caged dynamics from multiple perspectives,including the cage's lifetime,atomic local environ-ment,and atomic potential energy.The results reveal that Si atoms exhibit a pronounced cage effect due to the hindrance of Pd atoms,resulting in an anomalous peak in the non-Gaussian parameters.An in-depth investigation was conducted on the caged dynamics differences between fast and slow Si atoms.In comparison to fast Si atoms,slow Si atoms were surrounded by more Pd atoms and occupied lower potential energy states,resulting in smaller diffusion displacements for the slow Si atoms.Concurrently,slow Si atoms tend to be in the centers of smaller clusters with coordination numbers of 9 and 10.During the isothermal relaxation process,clusters with coordination numbers 9 and 10 have longer lifetimes,suggesting that the escape of slow Si atoms from their cages is more challenging.The findings mentioned above hold significant implications for understanding the caged dynamics.
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    Actively tuning anisotropic light-matter interaction in biaxial hyperbolic material α-MoO3 using phase change material VO2 and graphene

    周昆胡杨吴必园仲晓星...
    630-638页
    查看更多>>摘要：Anisotropic hyperbolic phonon polaritons(PhPs)in natural biaxial hyperbolic material α-MoO3 has opened up new avenues for mid-infrared nanophotonics,while active tunability of α-MoO3 PhPs is still an urgent problem necessarily to be solved.In this study,we present a theoretical demonstration of actively tuning α-MoO3 PhPs using phase change material VO2 and graphene.It is observed that α-MoO3 PhPs are greatly dependent on the propagation plane angle of PhPs.The insulator-to-metal phase transition of VO2 has a significant effect on the hybridization PhPs of the α-MoO3NO2 structure and allows to obtain actively tunable α-MoO3 PhPs,which is especially obvious when the propagation plane angle of PhPs is 90°.Moreover,when graphene surface plasmon sources are placed at the top or bottom of α-MoO3 in α-MoO3/VO2 structure,tunable coupled hyperbolic plasmon-phonon polaritons inside its Reststrahlen bands(RBs)and surface plasmon-phonon polaritons outside its RBs can be achieved.In addition,the above-mentioned α-MoO3-based structures also lead to actively tunable anisotropic spontaneous emission(SE)enhancement.This study may be beneficial for realization of active tunability of both PhPs and SE of α-MoO3,and facilitate a deeper understanding of the mechanisms of anisotropic light-matter interaction in α-MoO3 using functional materials.
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    Anisotropic spin transport and photoresponse characteristics detected by tip movement in magnetic single-molecule junction

    陈登辉羊志付新宇秦申奥...
    639-648页
    查看更多>>摘要：Orientation-dependent transport properties induced by anisotropic molecules are enticing in single-molecule junc-tions.Here,using the first-principles method,we theoretically investigate spin transport properties and photoresponse characteristics in trimesic acid magnetic single-molecule junctions with different molecular adsorption orientations and electrode contact sites.The transport calculations indicate that a single-molecule switch and a significant enhancement of spin transport and photoresponse can be achieved when the molecular adsorption orientation changes from planar geometry to upright geometry.The maximum spin polarization of current and photocurrent in upright molecular junctions exceeds 90％.Moreover,as the Ni tip electrode moves,the tunneling magnetoresistance of upright molecular junctions can be increased to 70％.The analysis of the spin-dependent PDOS elucidates that the spinterfaces between organic molecule and ferromagnetic electrodes are modulated by molecular adsorption orientation,where the molecule in upright molec-ular junctions yields higher spin polarization.Our theoretical work paves the way for designing spintronic devices and optoelectronic devices with anisotropic functionality base on anisotropic molecules.
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    Spin-polarized pairing induced by the magnetic field in the Bernal bilayer graphene

    黄妍周涛
    649-654页
    查看更多>>摘要：Recent experimental findings have demonstrated the occurrence of superconductivity in Bernal bilayer graphene when induced by a magnetic field.In this study,we conduct a theoretical investigation of the potential pairing symmetry within this superconducting system.By developing a theoretical model,we primarily calculate the free energy of the system with p+ip-wave parallel spin pairing,p+ip-wave anti-parallel spin pairing and d+i d-wave pairing symmetry.Our results confirm that the magnetic field is indeed essential for generating the superconductivity.We discover that the p+ip-wave parallel spin pairing leads to a lower free energy for the system.The numerical calculations of the energy band structure,zero-energy spectral function and density of states for each of the three pairing symmetries under consideration show a strong consistency with the free energy results.
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    Analytical solutions to the precession relaxation of magnetization with uniaxial anisotropy

    张泽南贾镇林薛德胜
    655-660页
    查看更多>>摘要：Based on the Landau-Lifshitz-Gilbert(LLG)equation,the precession relaxation of magnetization is studied when the external field H is parallel to the uniaxial anisotropic field Hk.The evolution of three-component magnetization is solved analytically under the condition of H=nHk(n=3,1 and 0).It is found that with an increase of H or a decrease of the initial polar angle of magnetization,the relaxation time decreases and the angular frequency of magnetization increases.For comparison,the analytical solution for Hk=0 is also given.When the magnetization becomes stable,the angular frequency is proportional to the total effective field acting on the magnetization.The analytical solutions are not only conducive to the understanding of the precession relaxation of magnetization,but also can be used as a standard model to test the numerical calculation of LLG equation.
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    Wedge-shaped HfO2 buffer layer-induced field-free spin-orbit torque switching of HfO2/Pt/Co structure

    陈建辉梁梦凡宋衍袁俊杰...
    661-667页
    查看更多>>摘要：Field-free spin-orbit torque(SOT)switching of perpendicular magnetization is essential for future spintronic devices.This study demonstrates the field-free switching of perpendicular magnetization in an HfO2/Pt/Co/TaOx structure,which is facilitated by a wedge-shaped HfO2 buffer layer.The field-free switching ratio varies with HfO2 thickness,reaching optimal performance at 25 nm.This phenomenon is attributed to the lateral anisotropy gradient of the Co layer,which is induced by the wedge-shaped HfO2 buffer layer.The thickness gradient of HfO2 along the wedge creates a corresponding lateral anisotropy gradient in the Co layer,correlating with the switching ratio.These findings indicate that field-free SOT switching can be achieved through designing buffer layer,offering a novel approach to innovating spin-orbit device.
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    Enhanced stability of FA-based perovskite:Rare-earth metal compound EuBr2 doping

    候敏娜郭旭韩梅斗雪赵均陶...
    668-675页
    查看更多>>摘要：It is highly desirable to enhance the long-term stability of perovskite solar cells(PSCs)so that this class of photovoltaic cells can be effectively used for the commercialization purposes.In this contribution,attempts have been made to use the two-step sequential method to dope EuBr2 into FAMAPbI3 perovskite to promote the stability.It is shown that the device durability at 85 ℃ in air with RH of 20％-40％is improved substantially,and simultaneously the champion device efficiency of 23.04％is achieved.The enhancement in stability is attributed to two points:(i)EuBr2 doping effectively inhibits the decomposition and α-δ phase transition of perovskite under ambient environment,and(ii)EuBr2 aggregates in the oxidized format of Eu(BrO3)3 at perovskite grain boundaries and surface,hampering humidity erosion and mitigates degradation through coordination with H2O.
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    Physical mechanism of secondary-electron emission in Si wafers

    赵亚楠孟祥兆彭淑婷苗光辉...
    676-681页
    查看更多>>摘要：CMOS-compatible RF/microwave devices,such as filters and amplifiers,have been widely used in wireless com-munication systems.However,secondary-electron emission phenomena often occur in RF/microwave devices based on silicon(Si)wafers,especially in the high-frequency range.In this paper,we have studied the major factors that influence the secondary-electron yield(SEY)in commercial Si wafers with different doping concentrations.We show that the SEY is suppressed as the doping concentration increases,corresponding to a relatively short effective escape depth λ.Mean-while,the reduced narrow band gap is beneficial in suppressing the SEY,in which the absence of a shallow energy band below the conduction band will easily capture electrons,as revealed by first-principles calculations.Thus,the new physical mechanism combined with the effective escape depth and band gap can provide useful guidance for the design of integrated RF/microwave devices based on Si wafers.
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    Effect of external magnetic field on the instability of THz plasma waves in nanoscale graphene field-effect transistors

    张丽萍孙宗耀李佳妮苏俊燕...
    682-689页
    查看更多>>摘要：The instability of plasma waves in the channel of field-effect transistors will cause the electromagnetic waves with THz frequency.Based on a self-consistent quantum hydrodynamic model,the instability of THz plasmas waves in the channel of graphene field-effect transistors has been investigated with external magnetic field and quantum effects.We analyzed the influence of weak magnetic fields,quantum effects,device size,and temperature on the instability of plasma waves under asymmetric boundary conditions numerically.The results show that the magnetic fields,quantum effects,and the thickness of the dielectric layer between the gate and the channel can increase the radiation frequency.Additionally,we observed that increase in temperature leads to a decrease in both oscillation frequency and instability increment.The numerical results and accompanying images obtained from our simulations provide support for the above conclusions.
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    Pre-existing orthorhombic embryos-induced hexagonal-orthorhombic martensitic transformation in MnNiSi1-x(CoNiGe)x alloy

    张婷婷龚元元鲁子骞徐锋...
    690-699页
    查看更多>>摘要：The thermal-elastic martensitic transformation from high-temperature Ni2In-type hexagonal structure to low-temperature TiNiSi-type orthorhombic structure has been widely studied in MnMX(M=Ni or Co,and X=Ge or Si)alloys.However,the answer to how the orthorhombic martensite nucleates and grows within the hexagonal parent is still unclear.In this work,the hexagonal-orthorhombic martensitic transformation in a Co and Ge co-substituted Mn-NiSi is investigated.One can find some orthorhombic laths embedded in the hexagonal parent at a temperature above the martensitic transformation start temperature(Ms).With the the sample cooing to Ms,the laths turn broader,indicating that the martensitic transformation starts from these pre-existing orthorhombic laths.Microstructure observation suggests that these pre-existing orthorhombic laths do not originate from the hexagonal-orthorhombic martensitic transformation because of the difference between atomic occupations of doping elements in the hexagonal parent and those in the pre-existing orthorhombic laths.The phenomenological crystallographic theory and experimental investigations prove that the pre-existing orthorhombic lath and generated orthorhombic martensite have the same crystallography relationship to the hexagonal parent.Therefore,the orthorhombic martensite can take these pre-existing laths as embryos and grow up.This work implies that the martensitic transformation in MnNiSi1-x(CoNiGe)x alloy is initiated by orthorhombic embryos.
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