首页期刊导航|中国科学:信息科学(英文版)
期刊信息/Journal information
中国科学:信息科学(英文版)
中国科学:信息科学(英文版)

周光召

月刊

1674-733X

informatics@scichina.org

010-64015683

100717

北京东黄城根北街16号

中国科学:信息科学(英文版)/Journal Science China Information SciencesCSCDCSTPCDEISCI
查看更多>>《中国科学》是中国科学院主办、中国科学杂志社出版的自然科学专业性学术刊物。《中国科学》任务是反映中国自然科学各学科中的最新科研成果,以促进国内外的学术交流。《中国科学》以论文形式报道中国基础研究和应用研究方面具有创造性的、高水平的和有重要意义的科研成果。在国际学术界,《中国科学》作为代表中国最高水平的学术刊物也受到高度重视。国际上最具有权威的检索刊物SCI,多年来一直收录《中国科学》的论文。1999年《中国科学》夺得国家期刊奖的第一名。
正式出版
收录年代

    Two-dimensional materials for future information technology:status and prospects

    Hao QIUZhihao YUTiange ZHAOQi ZHANG...
    1-147页
    查看更多>>摘要:Over the past 70 years,the semiconductor industry has undergone transformative changes,largely driven by the miniaturization of devices and.the integration of innovative structures and materi-als.Two-dimensional(2D)materials like transition metal dichalcogenides(TMDs)and graphene are pivotal in overcoming the limitations of silicon-based technologies,offering innovative approaches in transistor design and functionality,enabling atomic-thin channel transistors and monolithic 3D integration.We review the important progress in the application of 2D materials in future information technology,focusing in particular on microelectronics and optoelectronics.We comprehensively summarize the key advancements across ma-terial production,characterization metrology,electronic devices,optoelectronic devices,and heterogeneous integration on silicon.A strategic roadmap and key challenges for the transition of 2D materials from basic research to industrial development are outlined.To facilitate such a transition,key technologies and tools dedicated to 2D materials must be developed to meet industrial standards,and the employment of AI in material growth,characterizations,and circuit design will be essential.It is time for academia to actively engage with industry to drive the next 10 years of 2D material research.

    Progress on the program of Si-compatible two-dimensional semiconductor materials and devices

    Mingsheng XUYuwei WANGJiwei LIUDeren YANG...
    148-167页
    查看更多>>摘要:Two-dimensional(2D)materials are at the forefront of innovation,heralding a new era for next-generation electronics and optoelectronics.These materials are distinguished by their unique structural characteristics:they have no hanging bonds on their surface,exhibit weakened electrostatic shielding in the Z-direction,and boast atomic thickness in their monolayers.These features have led to groundbreaking discoveries in electrical,optical,and magnetic properties,paving the way for advancements in low-power electronics,valleytronics,infrared detectors,and memory devices.Despite these promising developments,Si-based technologies continue to dominate the landscape of next-generation electronics and optoelectronics,as well as heterogeneous integration.In response to this ongoing evolution,the National Natural Science Foundation of China(NSFC)initiated a major program in 2021 dubbed"Si-compatible two-dimensional semiconductor materials and devices".This study reviews the progress made under the NSFC Program,spotlighting its main achievements and outlining key future research directions.Additionally,it sheds light on the challenges that researchers in the 2D domain face,particularly in developing Si-compatible 2D tech-nologies.

    Contact engineering for temperature stability improvement of Bi-contacted MoS2 field effect transistors

    Zizheng LIUQing ZHANGXiaohe HUANGChunsen LIU...
    168-175页
    查看更多>>摘要:Semimetallic bismuth(Bi)is one of the most effective strategies for reducing the contact resis-tance of two-dimensional transition metal dichalcogenide field effect transistors(FETs).However,the low melting point of Bi contact(271.5℃)limits its reliable applications.In this study,we demonstrated that the temperature stability of Bi-contacted electrodes could be improved by inserting a high-melting point semimetallic antimony(Sb)between the Bi contacting layer and the gold(Au)capping layer.The proposed Bi/Sb/Au contact electrodes tended to form a metal mixture with a continuous surface during the heating process(Voids appeared on the surface of the Bi/Au contact electrodes after heating at 120℃).Because of the improved contacting layer formed by the semimetal Bi/Sb alloy,the fabricated Bi/Sb/Au-contacted molybdenum sulfide(MoS2)FETs with different gate lengths demonstrated higher on-state current stabil-ity after heating treatment than the Bi/Au contact.Because of the Bi/Sb/Au contact and poly(methyl methacrylate)package,the MoS2 FETs demonstrated time stability of at least two months from the almost unchanged transfer characteristics.The electrical stability indicates that the insertion of semimetallic Sb is a promising technology for reliable Bi-based contact.

    Highly responsive broadband Si-based MoS2 phototransistor on high-k dielectric

    Ali IMRANXin HEJiwei LIUQinghai ZHU...
    176-185页
    查看更多>>摘要:The demand for photodetectors and image sensors has grown exponentially in the past decade in biomedical,security surveillance,robotics,automotive,quality control,image recognition,and military applications,due to their superior quality,broadband detection,lower noise,and economic viability.Here,we report a MoS2 channel-based phototransistor over an HfO2/n-Si substrate isolated by an hBN layer.The high photoresponse is achieved through the integration of the photoconduction,photogating,and mobility enhancement process by utilizing excellent features of MoS2,HfO2/Si,and hBN.The capacitive coupling of the photogenerated carriers by high-k dielectric HfO2 leads to modulation of MoS2 Fermi level due to electrostatic doping.Furthermore,the MoS2 also contributes to the photogeneration of carriers due to its semiconducting nature,leading to additional photocurrent.Ultimately,the combination of photogating,photoconduction,and swift carrier extraction with remarkable mobility of 11.65 cm2·V-1.s-1 results in high responsivity,external quantum efficiency,and detectivity of 4.5 × 108 A·W-1,0.72 × 106,and 6.20 x 1016 Jones at 266 nm illumination,respectively.The device also demonstrates broadband photoresponse from 266-1000 nm wavelengths.The high responsivity distinguishes the potential of our device for the future of optoelectronics and broadband image sensing applications.

    Heterogeneous integration of 2D materials on Si charge-coupled devices as optical memory

    Zheng BIANFeng TIANZongwen LIXiangwei SU...
    186-193页
    查看更多>>摘要:Optical memory integrates the function of optical sensing in memory devices,remarkably pro-moting the interconnection between sensory and memory terminals.Silicon charge-coupled photodetectors and floating gate memory have been widely used in imaging and storage technologies,respectively.However,the heterogeneous integration of the two devices requires technological innovation and complex electrical con-nections.In this work,we adopt a three-dimensional layer stacking method to design a novel optical memory device.On the top of Si charge-coupled photodetectors,we successively deposit two-dimensional graphene,hexagonal boron nitride,and molybdenum disulfide as a floating gate layer,a tunneling layer,and a readout layer,respectively.By applying a gate bias on lightly doped Si,a deep depletion layer is formed with a high voltage potential drop.Under dark conditions,the depletion layer cannot be filled,and the electric field across the h-BN tunnel barrier is relatively small.Under light irradiation,the deep depletion layer is gradu-ally filled,and the h-BN tunneling layer withstands the increasing electric field,resulting in charge storage in the floating gate layer.Based on this mechanism,the device exhibits a gate voltage-dependent operation mode,including an integrated optical sensing-memory mode and an electrically driven storage mode.Under moderate gate voltage,the device can effectively detect the optical information with varied intensity and store the optical information in the floating gate,displaying optically controlled memory characteristics.Our work demonstrates a compact device structure for optical memory and displays excellent optically controlled memory performance,which can be applied in artificial vision systems.

    Solid-state non-volatile memories based on vdW heterostructure-based vertical-transport ferroelectric field-effect transistors

    Qiyu YANGZheng-Dong LUOFei XIAOJunpeng ZHANG...
    194-202页
    查看更多>>摘要:Driven by the explosive development of data-centric computation applications,it is becoming urgent to develop in-memory computing devices that are beyond the von Neumann architecture with an ar-rangement of separated logic and memory components.The transistor-type solid-state non-volatile memories,such as ferroelectric field-effect transistors(FeFETs),have long been regarded as a competitive candidate for future in-memory computing architectures.However,the density scaling towards high-density arrays would require advanced FeFETs with reduced footprints,which remains a great challenge so far.Here,a vertical-transport(VT)FeFET that flips the charge transport channel perpendicular to the substrate plane is proposed,in which a ferroelectric gate and a van der Waals(vdW)heterojunction channel are vertically integrated,effectively reducing the device footprints.The proposed VT-FeFET shows not only the robust bi-nary non-volatile memory states but also several key synaptic functionalities at the device level.An artificial neural network with supervised learning was simulated based on the device conductance switching properties,showing excellent classification accuracy for the MNIST handwritten digits.These findings suggest that the proposed VT-FeFET could offer a new solution for future non-volatile memories as well as more advanced neuromorphic systems.

    Hole mobility enhancement in monolayer WSe2 p-type transistors through molecular doping

    Shiyuan LIUXiong XIONGXin WANGXinhang SHI...
    203-209页
    查看更多>>摘要:Two-dimensional(2D)transition metal dichalcogenide(TMDC)semiconductor materials exhibit extraordinary electrical properties,holding promise for the realization of next-generation complementary metal-oxide-semiconductor(CMOS)devices at ultimate scaling.However,constrained by effective device doping strategies,the hole mobility and device performance of tungsten diselenide(WSe2)p-type transistors,especially monolayer chemical vapor deposition(CVD)-grown WSe2,have not met expectations.In this paper,an effective performance enhancement of monolayer WSe2 p-type transistor was achieved through a molecular doping strategy.Synthesizing monolayer WSe2 directly on SiO2 back-gated substrates and leveraging energy band alignment design,4-nitrobenzenediazonium tetrafluoroborate(4-NBD)molecular dopant with a concentration of 10 mM was utilized to modulate the Fermi level position of monolayer WSe2 for hole doping.The devices demonstrated a more than 98%increase in hole mobility,reaching up to 97 cm2·V-1·s-1 while maintaining the current on/off ratio of 108.Monolayer p-type WSe2 transistors with 1 μm channel length exhibit a high drive current surpassing 176 μA·μm-1,exceeding previous CVD-WSe2 devices with similar channel length.This straightforward and effective approach to improving the electrical performance of WSe2 transistors paves the way for advanced logic technologies based on transition metal dichalcogenide semiconductors.

    A novel graph oversampling framework for node classification in class-imbalanced graphs

    Riting XIAChunxu ZHANGYan ZHANGXueyan LIU...
    210-225页
    查看更多>>摘要:Graph neural network(GNN)is a promising method to analyze graphs.Most existing GNNs adopt the class-balanced assumption,which cannot deal with class-imbalanced graphs well.The oversampling technique is effective in alleviating class-imbalanced problems.However,most graph oversampling methods generate synthetic minority nodes and their edges after applying GNNs.They ignore the problem that the representations of the original and synthetic minority nodes are dominated by majority nodes caused by aggregating neighbor information through GNN before oversampling.In this paper,we propose a novel graph oversampling framework,termed distribution alignment-based oversampling for node classification in class-imbalanced graphs(named Graph-DAO).Our framework generates synthetic minority nodes before GNN to avoid the dominance of majority nodes caused by message passing in GNNs.Additionally,we introduce a distribution alignment method based on the sum-product network to learn more information about minority nodes.To our best knowledge,it is the first to use the sum-product network to solve the class-imbalanced problem in node classification.A large number of experiments on four real datasets show that our method achieves the optimal results on the node classification task for class-imbalanced graphs.

    Meta label associated loss for fine-grained visual recognition

    Yanchao LIFu XIAOHao LIQun LI...
    226-243页
    查看更多>>摘要:Recently,intensive attempts have been made to design robust models for fine-grained visual recognition,most notably are the impressive gains for training with noisy labels by incorporating a reweighting strategy into a meta-learning framework.However,it is limited to up or downweighting the contribution of an instance for label reweighting approaches in the learning process.To solve this issue,a novel noise-tolerant method with auxiliary web data is proposed.Specifically,first,the associations made from embeddings of well-labeled data with those of web data and back at the same class are measured.Next,its association probability is employed as a weighting fusion strategy into angular margin-based loss,which makes the trained model robust to noisy datasets.To reduce the influence of the gap between the well-labeled and noisy web data,a bridge schema is proposed via the corresponding loss that encourages the learned embeddings to be coherent.Lastly,the formulation is encapsulated into the meta-learning framework,which can reduce the overfitting of models and learn the network parameters to be noise-tolerant.Extensive experiments are performed on benchmark datasets,and the results clearly show the superiority of the proposed method over existing state-of-the-art approaches.

    Adaptive observer-based integral event-triggered antivibration control of a full aircraft active landing gear system with irregular runway excitations

    Wenxiao HUChenglong DUFanbiao LIXinmin CHEN...
    244-257页
    查看更多>>摘要:This study addresses the antivibration issue of a full aircraft active landing gear system(LGS)under landing impact and runway excitations via a novel adaptive observer-based integral event-triggered control method.First,a full aircraft active LGS comprising a front gear and two synchronized main left and right gears with active suspensions is established,where the information exchange among them is not implemented directly.Second,two adaptive observers are designed separately for the front and main LGSs to identify the varying damping parameters and estimate the system states simultaneously.Third,estimated states are transmitted to a shared network through a novel integral event-triggered mechanism(I-ETM);thus,the front and main LGSs are interconnected,and a networked control scheme for the aircraft LGS is constructed.Additionally,the integrated active control law is designed with the aid of the transmitted states of the front and main LGSs,enhancing the robustness against the pitch vibration of the aircraft.Furthermore,the L2-stability of the hybrid system is guaranteed to depress the vertical vibration effect of the landing impact and irregular runway excitations,thus improving passenger safety and comfort.Moreover,a codesign method is provided to obtain feasible solutions to the gain matrices of the observers and controllers simultaneously.Simulation and comparison results are presented to illustrate the effectiveness and superiority of the proposed control scheme in antivibration and saving communication resources.