首页期刊导航|Key engineering materials
期刊信息/Journal information
Key engineering materials
Trans Tech Publications Ltd.
Key engineering materials

Trans Tech Publications Ltd.

半月刊

1013-9826

Key engineering materials/Journal Key engineering materials
正式出版
收录年代

    Effect of incubation time on deposition behavior of Ruthenium films by MOCVD using (2,4-Dimethylpentadienyl)(ethylcyclopentadienyI)Ruthenium

    Masaki HiranoKazuhisa KawanoHiroshi Funakubo
    87-90页
    查看更多>>摘要：The deposition mechanism of metal-Ru films including incubation time was investigated for Ru films prepared by metal organic chemical vapor deposition from (2,4-Dimethylpentadienyl)(ethylcyclopentadienyl)Ruthenium (DER) - O_2 system. Substrates with amorphous top-layer having various Hf/Siratio, SiO_2(native oxide)/(001)Si (SiO_2), HfSiON/SiON/(001)Si (HfSiON) and HfO_2/SiON/(001)Si(HfO_2), were used as substrates. The deposition temperature dependence of the deposition amount at the fixed deposition time ranging from 210 ℃ to 300 ℃ revealed that the deposition amount depended on the deposition temperature below 250 ℃, while it was almost constant above this temperature. Incubation time depended on the kinds of substrate at 210 ℃ and the substrate surface was fully covered in a shorter time with smaller deposition amount for the substrates with shorter incubation time. In addition, the film with shorter incubation time had smaller surface roughness.
      原文链接:
    • NETL
    • NSTL
    • Trans Tech Publications Ltd

    Effects of UV Irradiation on Microstructure and Properties of HfO_2 Films Prepared from Alkoxy-derived Precursor Solution

    Kazuyuki SuzukiKazumi Kato
    91-94页
    查看更多>>摘要：The HfO_2 films prepared from alkoxy-derived precursor solution chemically modified with diethanolamine. The effects of UV irradiation on the HfO_2 films were investigated. The UV irradiation using low pressure mercury lamp (LPML) was effective for the organics decomposition in the film and densification. The uniform and smooth HfO_2 films were obtained. The refractive index of HfO_2 films was enhanced.
      原文链接:
    • NETL
    • NSTL
    • Trans Tech Publications Ltd

    Measurement of d_(15) Shear-Mode Piezoelectric Response in PZT Thin Film

    Tsuyoshi AokiShigeyoshi UmemiyaMasaharu HidaKazuaki Kurihara...
    95-98页
    查看更多>>摘要：Piezoelectric films using d_(15) shear-mode can be applied to many useful MEMS devices. The small displacement derived from the d_(15) shear-mode was directly observed by a SPM measurement. An isolated PZT(52/48) active part having a pair of driving Cu electrodes was processed in a 5 Jim-thick sputtering film. The displacement measurement of the active part and its FEM analysis suggested that the estimated d_(15) piezoelectric constant of the film was 590 pm/V. And, the d_(31) value of the film was -120 pm/V measured by a conventional cantilever method. The obtained piezoelectric constants of the PZT film are near those of bulk.
      原文链接:
    • NETL
    • NSTL
    • Trans Tech Publications Ltd

    Polarized Raman study for epitaxial PZT thick film with the mixture orientation of (100)/(001)

    Mitsumasa NakajimaTakashi FujisawaKen NishidaTakashi Yamamoto...
    99-102页
    查看更多>>摘要：(100)/(001)-oriented PZT thick films were grown on SrRuO_3//(100) SrTiO_3 and (100) MgO substrates by matel organic chemical vapor deposition (MOCVD) with different volume fraction of (001) orientation, and were compared with (001) single-oriented epitaxial PZT thick films grown on SrRuO_3//LaNiO_3//(100) CaF_2 by polarized Raman spectroscopy. The spectra from (100)-oriented domain and (001)-oriented domain can be individually observed for the films with the mixture orientation of (100)/(001). Raman analysis revealed the different strain state of (100)-oriented and (001)-oriented domains. Moreover, the rotation dependence of A_1(1TO) mode could be explained by the calculation using the volume fraction of (001)-oriented domains obtained from X-ray reciprocal space mapping analysis for the films with the mixture orientation of (100)/(001). These results suggest the local structure characterized by Raman spectroscopy almost agreed with the structure characterized by XRD analysis for the films with the mixture orientation of (100)/(001).
      原文链接:
    • NETL
    • NSTL
    • Trans Tech Publications Ltd

    EFFECT OF PAA-NH_4 DISPERSANT ON DISPERSIBILITY OF AQUEOUS Pb(Zr,Ti)O_3 SLURRIES AND PIEZOELECTRIC PROPERTIES OF RESULTANT SINTERED BODIES

    M. FujiokaT. YaraaguchiW. SakamotoK. Kikuta...
    103-106页
    查看更多>>摘要：The effect of poly ammonium acrylate (PAA-NH_4) dispersant on the dispersibility of Pb(Zr,Ti)O_3 (PZT) slurries and the piezoelectric properties of resultant PZT sintered bodies was investigated for the establishment of environmentally friendly aqueous processing. The dispersion state and viscosity of PAA-NH4-added PZT aqueous slurries strongly depended on the slurry pH. Well-dispersed PZT slurries with negligibly small Pb~(2+) dissolution were obtained in the alkaline side due to the electrostatic steric hindrance effect of adsorbed polyelectrolyte dispersant molecules with a high dissociation ratio of carboxylic acid groups. The homogeneous dense microstructure and the enhancement of the piezoelectric properties of PZT ceramic bodies were achieved by preparing the aqueous PZT slurry with an optimum amount of dispersant.
      原文链接:
    • NETL
    • NSTL
    • Trans Tech Publications Ltd

    Resistance Changes of (La, Sr)MnO_3 Thin Film via Exchange Bias Tuning by the Application of an External Electric Field

    Takeshi YokotaShotaro MurataSinya KitoManabu Gomi...
    107-110页
    查看更多>>摘要：We have investigated the relationships between the electric field-induced resistance change and the strength of the exchange interaction of the Cr_2O_3/La_(0.7)Sr_(0.3)MnO_3 (LSMO) magnetic hetero system. The hetero system subjected to field cooling (FC) showed a positive shift in the magnetization curves due to an exchange bias. The exchange bias field changed depending on the FC field. Resulting from the exchange behaviors, the resistance of LSMO film was changed by the application of an electric field to the Cr_2O_3 gate. This resistance change is more likely due to the interface interaction strength between the Cr_2O_3 and LSMO film.
      原文链接:
    • NETL
    • NSTL
    • Trans Tech Publications Ltd

    Ferroelectric Properties of Epitaxial BiFe_(0.97)Mn_(0.03)O_3 Thin Films with Different Crystal Orientations Deposited on Buffered Si Substrates

    Hyun-young GoNaoki WakiyaTakanori KiguchiTomohiko Yoshioka...
    111-114页
    查看更多>>摘要：We investigated electrical properties of epitaxial Mn doped bismuth ferrite BiFe_(0.97)Mn_(0.03)O_3 (BFMO) thin films with different crystal orientations deposited on Si substrates with appropriate buffer layers. Epitaxial SrRuO3 (SRO) thin films with (001), (101), and (111) orientations were grown on CeO_2/yttria-stabilized zirconia (YSZ)/Si(001) substrates and YSZ/Si(001), respectively, by the insertion of MgO and TiO_2 atomic layers using pulsed-laser deposition (PLD). Using spin coating, we deposited BFMO thin films onto orientated SRO thin films. The BFMO orientation followed the SRO orientation. The Pr values of the BFMO were ordered as follows {111}＞{110}＞{100}, which is the same as that predicted by crystallographic considerations. The largest Pr value of the {111} orientation is 76 μC/cm~2 at 100 kHz, 25℃.
      原文链接:
    • NETL
    • NSTL
    • Trans Tech Publications Ltd

    Effect of Stacking Layers on the Structure and Properties of Ca(Mg_(1/3)Nb_(2/3))O_3/ CaTiO_3 Thin Films

    Jing ZhouJie ZhuWen ChenJie Shen...
    115-118页
    查看更多>>摘要：Effect of stacking layers on the structure and properties of Ca(Mg_(1/3)Nb_(2/3))O_3/CaTiO_3 (CMN/CT) microwave dielectric heterogeneous thin films prepared was investigated. Precursor solutions for CMN and CT synthesis were obtained by Pechini method. The arrangement pattern has affected structure and properties of heterogeneous thin film. The CMN-CT arrangement heterostructure thin film has second phase from the CMN films layer. The CT-CMN heterostructure film which has a smooth and dense microstructure was composed of pure perovskite phase without any second phase, this result was attributed to the CT film layer which is a buifer layer between substrate and CMN film layer. At 1MHz frequency, CT-CMN exhibits the dielectric properties of ε_r=47.5, tanδ=0.020.
      原文链接:
    • NETL
    • NSTL

    Dielectric Properties of Pb_(1-x)Ba_xZrO_3 Thin Films with Higher Barium Content

    Xihong HaoJiwei Zhai
    119-122页
    查看更多>>摘要：The dc bias and temperature dependence of dielectric properties of Pb_(1-x)Ba_xZrO_3 (PBZ) thin films with higher x (x=0.6, 0.7, 0.8 and 1) were investigated in detail. The results indicated that Pb_(0.4)Ba_(0.6)ZrO_3 films possessed a moderate tunability of 32.3% and a higher figure of merit of 53.8, which were measured at 100 kHz and at room temperature. Moreover, Pb_(0.4)Ba_(0.6)ZrO_3 films exhibited a smaller temperature coefficient of capacitance TCC_(-20-90)=-1390 ppm/℃.
      原文链接:
    • NETL
    • NSTL
    • Trans Tech Publications Ltd

    Preparation of N-doped ZnO Films by MOCVD

    Kenkichiro KobayashiHiroki KobayashiYasumasa TomitaYasuhisa Maeda...
    123-126页
    查看更多>>摘要：Crystalline ZnO films were grown on Y-stabilized ZrO_2 substrates heated at 300 - 600 ℃ in NH_3 atmosphere. It is clarified from Fourier transform infrared measurements that N-doped ZnO films grown at 350 and 400 ℃ contain N-C and Zn-H bonds. In the devices of n-type ZnO/N-doped ZnO/Au, a good rectification characteristic is attained for an N-doped ZnO film deposited at 300℃, whereas a linear current vs. voltage characteristic is seen for a film deposited at 500 ℃.
      原文链接:
    • NETL
    • NSTL
    • Trans Tech Publications Ltd